CLT135A [CLAIREX]
Photo Transistor;
| 型号： | CLT135A |
| 厂家： | 
CLAIREX TECHNOLOGIES, INC |
| 描述： | Photo Transistor 晶体 光电 晶体管 光电晶体管 |
| 文件： | 总1页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
Clairex
CLT135
Technologies, Inc.
NPN Silicon Phototransistor
July, 2001
0.500 (12.7) min
0.210 (5.33)
0.190 (4.83)
0.215 (5.46)
0.205 (5.21)
0.190 (4.83)
0.176 (4.47)
COLLECTOR
0.158 (4.01)
0.136 (3.45)
N/C
EMITTER
0.100 (2.54) dia
0.025 (0.64)
max
0.147 (3.73)
0.137 (3.48)
0.060 (1.52)
max
0.019 (0.48)
0.016 (0.41)
Case 17
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature ...................................................................... -65°C to +150°C
operating temperature ................................................................... -65°C to +125°C
lead soldering temperature(1) ......................................................................... 260°C
collector-emitter voltage.....................................................................................30V
continuous collector current............................................................................50mA
continuous power dissipation(2).................................................................... 250mW
• high sensitivity
• ± 9° acceptance angle
• custom aspheric lensed TO-18
package
• transistor base is not bonded
• tested and characterized at 940nm
• usable throughout visible and near
infrared spectrum
notes:
1. 0.06” (1.5mm) from the header for 5 seconds maximum
2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
• RoHS compliant
description
The CLT135 is an NPN silicon
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal sealed
aspheric lens. Narrow acceptance
angle enables excellent on-axis
coupling. The CLT135 is spectrally
and mechanically matched to the
CLE135 IRED. For additional
information, call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
test conditions
units
Light current(3)
IL
ICEO
V(BR)CEO
tr, tf
1.0
-
30
-
2.5
-
-
3.0
18
-
25
-
-
-
mA
nA
V
µs
deg.
VCE = 5V, Ee = 0.5mW/cm2
VCE = 10V, Ee = 0
IC = 100µA
Collector dark current
Collector-emitter breakdown
Output rise and fall time
Total angle at half sensitivity points
VCE=5V, RL=100Ω.
IC = 1.0mA,
θ
HP
notes: 3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 940nm
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/16/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
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