A1N4007G-G [COMCHIP]
General Purpose Silicon Rectifiers;
| 型号： | A1N4007G-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | General Purpose Silicon Rectifiers |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Purpose Silicon Rectifiers
A1N4007G-G
Voltage: 1000 V
Current: 1.0 A
RoHS Device
DO-41
Features
- Low drop down voltage
1.0(25.40) Min.
- High current capability
- Low reverse leakage.
- High forward surge current capability.
- Glass passivated chip junction.
- Comply with AEC-Q101
0.205(5.20)
0.160(4.20)
0.107(2.70)
0.080(2.00)
1.0(25.40) Min.
Mechanical data
- Case: JEDEC DO-41 molded plastic
- Epoxy: UL 94V-0 rate flame retardant
0.034(0.86)
0.028(0.70)
- Terminals: Solderable per MIL-STD-750
method 2026.
Dimensions in inches and (millimeter)
- Polarity: Color band denotes cathode end
Circuit diagram
- Mounting position: Any
- Weight: 0.34 grams(approx. )
Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
Parameter
Conditions
Value
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
1000
700
1000
1
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current
see figure 1
I(AV)
8.3mS single half sine-wave
superimposed on rated load
(JEDEC Method) TL=110°C
Peak forward surge current
IFSM
VF
30
A
V
Maximum instantaneous forward voltage
@IF = 1A
1.1
TA = 25°C
5
50
Maximum DC reverse current
at rated DC blocking voltage
μA
IR
TA = 125°C
Typical junction Capacitance
Typical thermal resistance
pF
°C/W
°C
VR = 4V, f = 1MHz
Junction to ambient
CJ
RΘJA
TJ
10
45
Operating junction temperature range
Storage temperature range
-55 ~ +125
-55 ~ +150
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
AQW-BG001
REV:A
Page 1
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( A1N4007G-G )
Fig.1 - Forward Current Derating Curve
Fig.2 - Maximum Non-Repetitive
Peak Forward Surge Current
1.2
1.0
0.8
0.6
0.4
0.2
0
100
Resistive or inductive load
8.3mS single half sine-wave
(JEDEC Method)
10
1
100
1
10
0
25
50
75
100
125
Lead Temperature, TL (°C)
Number of Cycles at 60Hz
Fig.3 - Typical Instantaneous Forward
Characteristics
100
Fig.4 - Typical Reverse Characteristics
10
TJ=125°C
1.0
10
TJ=25°C
1.0
0.1
TJ=25°C
0.1
0.01
Pulse width=300μs.
1% duty cycle
0.01
0.001
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
Instantaneous Forward Voltage, (V)
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Typical Junction Capacitance
100
10
1
0.01
0.1
1.0
10
100
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
AQW-BG001
REV:A
Page 2
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Taping Specification For Axial Lead Diodes
90℃±5℃
Z
A
L
L1
B
H
L2
T
W
SYMBOL
(mm)
A
B
Z
T
L1
1.00 (max)
L2
1.00 (max)
1.20 (max)
DO-41
DO-41
5.00 ± 0.50
52.00 ± 0.50
6.00 ± 0.40
0.047 (max)
0.039 (max)
0.039 (max)
(inch)
0.197 ± 0.020
2.047 ± 0.020
0.236 ± 0.016
SYMBOL
(mm)
L
W
H
260.00 ± 10.00
75.00 ± 10.00
140.00 ± 10.00
(inch)
10.236 ± 0.394
2.953 ± 0.394
5.512 ± 0.394
Standard Packaging
AMMO PACK
Case Type
BOX
CARTON
( pcs )
( pcs )
5,000
50,000
DO-41
Company reserves the right to improve product design , functions and reliability without notice.
AQW-BG001
REV:A
Page 3
Comchip Technology CO., LTD.
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