BC858CW-HF [COMCHIP]
Small Signal Bipolar Transistor,;型号: | BC858CW-HF |
厂家: | COMCHIP TECHNOLOGY |
描述: | Small Signal Bipolar Transistor, |
文件: | 总5页 (文件大小:497K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
General Purpose Transistor
BC856AW-HF Thru. BC858CW-HF
PNP
RoHS Device
Halogen Free
Features
SOT-323
- Ideally suited for automatic insertion.
- For switching and AF amplifier applications.
0.087(2.20)
0.079(2.00)
3
0.053(1.35)
0.045(1.15)
Mechanical data
1
2
0.055(1.40)
0.047(1.20)
- Case: SOT-323, molded plastic.
- Terminals: Solderable per MIL-STD-750,
0.006(0.15)
0.003(0.08)
method 2026.
0.043(1.10)
0.035(0.90)
0.096(2.45)
0.085(2.15)
Circuit diagram
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.018(0.46)
0.010(0.26)
3
1 B:BASE
2 E:EMITTER
3 C:COLLECTOR
C
1
B
Dimensions in inches and (millimeter)
E
2
Maximum Ratings (Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BC856W-HF
BC857W-HF
BC858W-HF
-80
-50
-30
Collector-Base voltage
VCBO
V
BC856W-HF
BC857W-HF
BC858W-HF
-65
-45
-30
Collector-Emitter voltage
Emitter-Base voltage
VCEO
V
VEBO
IC
-5
-0.1
V
A
Collector current-continuous
Collector power dissipation
Thermal resistance from junction to ambient
Junction temperature
PC
150
mW
°C/W
°C
RθJA
TJ
833
150
Storage temperature range
TSTG
-65 to +150
°C
REV:A
Page 1
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR59
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristics (Ta= 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
BC856W-HF
BC857W-HF
BC858W-HF
-80
-50
-30
Collector-Base breakdown voltage
IC=-10μA, IE=0
VCBO
V
BC856W-HF
BC857W-HF
BC858W-HF
-65
-45
-30
Collector-Emitter breakdown voltage
IC=-10mA, IB=0
VCEO
V
Emitter-Base breakdown voltage
Collector cut-off current
IE=-1μA, IC=0
VEBO
ICBO
-5
V
VCB=-30V, IE=0
-15
nA
BC856AW, BC857AW, BC858AW
BC856BW, BC857BW, BC858BW
BC857CW, BC858CW
125
220
420
250
475
800
DC current gain
VCE=-5V, IC=-2mA
hFE
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
VCE(sat)
VBE(sat)
IC=-100mA , IB=-5mA
IC=-100mA, IB=-5mA
-0.65
-1.1
V
V
Transition frequency
Collector capacitance
VCE=-5V, IC=-10mA, f=100MHZ
VCB=-10V, f=1MHZ
fT
100
MHZ
pF
Cob
4.5
REV:A
Page 2
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR59
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristic Curves (BC856AW-HF Thru. BC858CW-HF)
Fig.1 - Static Characteristic
Fig.2 - hFE — IC
-6
-5
-4
-3
-2
-1
-0
500
400
300
200
100
0
VCE=-5V
IB=-20µA
IB=-18µA
COMMON
EMITTER
Ta=25°C
Ta=100°C
Ta=25°C
IB=-16µA
IB=-14µA
IB=-12µA
IB=-10µA
IB=-8µA
IB=-6µA
IB=-4µA
IB=-2µA
-0
-2
-4
-6
-8
-10
-1
-10
-100
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Fig.3 - VBEsat — IC
Fig.4 - VCEsat — IC
-1000
-800
-600
-400
-200
-0
-1000
-100
-10
β=20
Ta=25°C
Ta=100°C
Ta=25°C
Ta=100°C
β=20
-0.1
-1
-10
-100
-0.1
-1
-10
-100
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig.5 - Cob / Cib — VCB / VEB
Fig.6 - PC — Ta
15
12
9
180
f=1MHz
IE=0 / IC=0
Ta=25°C
150
120
90
60
30
0
Cib
Cob
6
3
0
-0.1
-1
-10
0
25
50
75
100
125
150
Reverse Bias Voltage, V (V)
Ambient Temperature, Ta (°C)
REV:A
Page 3
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR59
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
P0
P1
B
C
P
A
12
0
o
D2
D1
D
W1
SYMBOL
(mm)
A
B
C
d
D
D1
D2
2.25 ± 0.05
2.55 ± 0.05
1.19 ± 0.05
1.55 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00
SOT-323
SOT-323
(inch)
0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.061 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
8.00 + 0.30
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
12.30 ± 1.00
- 0.10
0.315 + 0.012
- 0.004
(inch)
0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004
0.484 ± 0.039
REV:A
Page 4
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR59
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
Marking Code
Part Number
BC856AW-HF
BC857AW-HF
BC858AW-HF
BC856BW-HF
BC857BW-HF
BC858BW-HF
BC857CW-HF
BC858CW-HF
3
3A
3E
3J
XX
1
2
3B
3F
3K
3G
3L
xx = Product type marking code
●
= Halogen Free
Suggested PAD Layout
A
SOT-323
SIZE
B
(mm)
0.50
0.80
(inch)
0.020
0.031
A
B
C
D
1.30
2.20
0.051
0.087
D
Notes:
1. General tolerance:±0.05mm.
2. The pad layout is for reference purposes only.
C
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-323
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
QW-JTR59
Comchip Technology CO., LTD.
相关型号:
BC858CW-TAPE-13
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC858CW-TAPE-7
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC858CWE6327
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC858CWE6327HTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC858CWE6433
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON
©2020 ICPDF网 联系我们和版权申明