CDBD8100-G [COMCHIP]

Chip Schottky Barrier Rectifier

Comchip

SMD Diode Specialist

CDBD8060-G Thru. CDBD8100-G

Reverse Voltage: 60 to 100 Volts

Forward Current: 8.0 Amp

RoHS Device

Features

-

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

TO-263/D2PAK

-

Low profile surface mounted application in order to

optimize board space.

0.059(1.50)

0.031(0.80)

0.413(10.50)

0.394(10.00)

0.185(4.70)

0.169(4.30)

0.055(1.40)

0.047(1.20)

-

Low power loss, high efficiency.

-

High current capability, low forward voltage drop.

-

High surge capability.

-

Guardring for overvoltage protection.

-

Ultra high-speed switching.

-

Silicon epitaxial planar chip, metal silicon junction.

-

Lead-free parts meet environmental standards of

MIL-STD-19500

/228

4

0.370(9.40)

0.327(8.30)

1

0.114(5.30)

0.098(4.40)

2

3

0.063(1.60)

0.055(1.30)

0.024(0.60)

0.014(0.35)

Mechanical data

-

Epoxy: U/L 94-V0 rate flame retardant.

-

Case: TO-263/D2PAK, Transfer Molded.

-

Terminals: Solderable per MIL-STD-202,

method 208.

2=4

0.205(5.20)

0.189(4.80)

0.106(2.70)

0.091(2.30)

Dimensions in inches and

(millimeters)

-

Polarity: As marked.

-

Weunting Position: Any

-

Weight:1.46 gram(approx.).

3

Maximum Ratings

(At Ta=25

O

C, unless otherwise noted)

Symbol

V

RRM

V

RMS

V

DC

I

O

V

F

I

FSM

I

R

I

R

R

θJC

T

J

T

STG

0.75

175

5.0

50

4.0

-55 to +150

-55 to +150

CDBD

8060-G

60

42

60

8.0

0.85

CDBD

8100-G

100

70

100

Parameter

Maximum Recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Forward rectified current (See fig. 1)

Maximum forward voltage at I

O

Forward surge current, 8.3ms single half sine-wave superimposed on

rated load (JEDEC method)

Maximum Reverse current at 25°C per leg (Note1)

Maximum Reverse current at 100°C per leg (Note1)

Typical Thermal resistance junction to case Per Leg

Operating temperature range

Storage temperature range

Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle.

Unit

V

V

V

A

V

A

mA

mA

°C/W

°C

°C

REV:A

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Comchip Technology CO., LTD.

Chip Schottky Barrier Rectifier

Comchip

SMD Diode Specialist

RATING AND CHARACTERISTIC CURVES (CDBD8060-G Thru. CDBD8100-G)

FIG.1- Forward Derating Curve

FIG.2-Peak Forward Surge Current

9

Average Firward Rectified Current

,(A)

Peak Forward Surge Current

,(A)

300

250

200

150

100

50

0

8

7

6

5

4

3

2

1

0

0

20

40

60

80

100 120 140 160 180 200

1

10

Number of Cycles at 60Hz

100

Case Temperature, (°C)

FIG.3-Typical Forward Characteristic Per Leg

100

10

FIG.4-Typical Reverse Characteristics

T

J

=125

°C

Instantaneous Reverse Current, (mA)

Instantaneous Forward Current,

(

A

)

1.0

CDBD8060-G

10

CDBD8100-G

T

J

=75

°C

0.1

1.0

0.01

T

J

=25

°C

CDBD8060-G

CDBD8100-G

0.1

0.1

0.3

0.5

0.7

0.9

1.1

0.001

0

20

40

60

80

100

120

140

Instantaneous Forward Voltage, ( V )

Peraent of Rated Voltage Peak Reverse Voltage, (%)

REV:A

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Page 2

Comchip Technology CO., LTD.

Chip Schottky Barrier Rectifier

Marking Code

Part Number

CDBD8060-G

CDBD8100-G

Marking Code

SD8L60

SD8L100

Comchip

SMD Diode Specialist

XXXXXX

XXXXXX / XXXXXXX = Product type marking code

Suggested PAD Layout

TO-263 / D2PAK

SIZE

(mm)

A

B

C

X1

X2

Y1

Y2

9.50

2.50

16.90

10.80

1.10

11.40

3.50

(inch)

0.374

0.098

0.665

0.425

0.043

0.449

0.138

X2

B

C

A

Y1

X1

Y2

Standard Packaging

TUBE PACK

Case Type

TUBE

( pcs )

BOX

( pcs )

TO-263 / D2PAK

50

2,000

REV: A

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Page 3

Comchip Technology CO., LTD.