CDBER0130L-HF [COMCHIP]

SMD Schottky Barrier Diode; SMD肖特基势垒二极管
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MAX34334CSE前5页PDF页面详情预览
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBER0130L-HF
(RoHS Device)
Io = 100 mA
V
R
= 30 Volts
0503(1308)
0.053(1.35)
0.045(1.15)
Features
Halogen free.
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.034(0.85)
0.026(0.65)
Mechanical data
Case: 0503(1308) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BP
Mounting position: Any
Weight: 0.002 gram(approx.).
0.022(0.55) Typ.
0.016(0.40) Typ.
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RRM
V
R
I
O
35
30
100
V
V
mA
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
I
FSM
T
STG
T
j
-40
1
+125
+125
A
O
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
I
F
= 10 mA
V
R
= 10 V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
0.35
10
V
uA
REV:A
QW-G1041
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBER0130L-HF)
Fig. 1 - Forward characteristics
1000
1m
Fig. 2 - Reverse characteristics
100
Reverse current ( A )
Forward current (mA )
100u
75 C
O
10u
25 C
O
10
C
1u
5
12
C
C
O
75
O
1
O
25
-25
O
C
100n
-25 C
O
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10n
0
5
10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz
Ta = 25 C
100
80
10
60
40
20
1
0
5
10
15
20
25
30
0
0
25
50
75
100
O
125
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
280
Ta=25 C
IF=10mA
n=30pcs
O
Fig. 6 - IR Dispersion map
50
45
Ta=25 C
VR=10V
n=30pcs
O
Fig. 7 - CT Dispersion map
30
29
Ta=25 C
F=1MHz
VR=0V
n=10pcs
O
35
30
25
20
15
10
5
0
AVG:4.2uA
Capacitance between
terminals(pF)
Forward voltage (mV)
Reverse current (uA)
270
40
28
27
26
25
24
23
22
21
20
AVG:22.8pF
260
250
240
AVG:241mV
230
REV:A
QW-G1041
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
0.90
±
0.10
0.035
±
0.004
B
1.46
±
0.10
0.057
±
0.004
C
0.80
±
0.10
0.031
±
0.004
d
1.55
±
0.05
0.061
±
0.002
D
178
±
1
7.008
±
0.04
D
1
60.0 MIN.
2.362 MIN.
D
2
13.0
±
0.20
0.512
±
0.008
ER/0503
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138
±
0.002
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
0.079
±
0.004
T
0.22
±
0.05
0.008
±
0.002
W
8.00
±
0.20
0.315
±
0.008
W
1
13.5 MAX.
0.531 MAX.
ER/0503
(mm)
(inch)
REV:A
QW-G1041
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number
CDBER0130L-HF
Marking Code
BP
BP
Suggested PAD Layout
ER/0503
SIZE
(mm)
A
B
C
D
E
0.85
0.55
0.85
1.40
0.30
(inch)
0.033
0.022
0.033
C
D
A
E
0.055
B
0.118
Standard Package
Qty per Reel
Case Type
(Pcs)
ER/0503
4000
Reel Size
(inch)
7
REV:A
QW-G1041
Page 4
Comchip Technology CO., LTD.