Low V
F
SMD Schottky Bridge Rectifiers
CDBHM220L-G Thru. CDBHM2100L-G
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-For surface mounted applications..
-Metal-Semiconductor
junction with guarding.
-Epitaxial
construction.
-
Very low forward Voltage drop
.
-High current capability
-Plastic material has UL flammability classification 94V-0
-For use in low voltage,high frequency inverters, free
wheeling , and polarity protection applications.
-Pb free product.
0.031(0.80)
0.019(0.50)
0.106(2.7)
0.09(2.3)
MBS-2
0.02(0.5)*45
°
0.275(7.0)MAX
0.067(1.7)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.165(4.2)
0.150(3.8)
- +
SBXXS
0.014(0.35)
0.006(0.15)
0.043(1.1)
0.027(0.7)
0.067(1.7)
0.057(1.3)
0.193(4.9)
0.177(4.5)
0.106(2.7)
0.09(2.3)
Mechanical data
-Case: molded plastic.
-Polarity: Indicated by cathode band.
-Weight:0.125 gram(approx.).
0.008(0.2)
Dimensions in inches and
(millimeters)
xxx = Product type marking code
Maximum Rating And Electrical Characteristics
Rating at T
A
=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Parameter
CDBHM CDBHM CDBHM CDBHM CDBHM CDBHM CDBHM CDBHM
220L-G 230L-G 240L-G 250L-G 260L-G 280L-G 290L-G 2100L-G
SB23S
30
21
30
SB24S
40
28
40
SB25S
50
35
50
2.0
SB26S
60
42
60
SB28S
80
56
80
SB29S
90
63
90
SB210S
100
70
100
Unit
Marking
SB22S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
@T
L
=100
O
C
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=100
O
C
O
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
V
V
V
A
I
FSM
50
A
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.55
0.70
1.0
20
125
20
-55 to +125
-55 to +150
0.85
V
mA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to lead.
REV: A
QW-BL013
Page 1
Comchip Technology CO., LTD.
Low V
F
SMD Schottky Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBHM220L-G Thru. CDBHM2100L-G)
FIG.
1 -
FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
(AMPERES)
FIG.
2
–
MAXIMUM NON-REPETITIVE SURGE CURRENT
60
2.8
AVERAGE FORWARD CURRENT
(AMPERES)
2.0
45
1.2
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
30
0.4
15
PULSE WIDTH
8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC
METHOD)
0
25
50
75
100
125
150
175
0
1
2
5
10
20
50
100
LEAD TEMPERATURE
℃
NUMBER OF CYCLES AT
60Hz
FIG.3-TYPICAL FORWARD CHARACTERISTICS
20
10
INSTANTANEOUS FORWARD CURRENT,
(A)
CDBHM220L-G~CDBHM240L-G
FIG.4-TYPICAL JUNCTION CAPACITANCE
1000
CDBHM250L-G~CDBHM260L-G
CDBHM280L-G~CDBHM2100L-G
CAPACITANCE,(pF)
100
1.0
TJ
= 25 °C
PULSE W IDT H
300us
1%
DU T Y C YCLE
TJ=25
℃
f=1MH
Z
0.1
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
INSTANTANEOUS FORWARD VOLTAGE,
(VOLTS)
10
0.1
1
10
100
Reverse Voltage, (V)
FIG.5-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,
(mA )
10
T
J
=
125
℃
T
J
=
100
℃
1.0
0.1
0.01
T
J
=
25
℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
REV: A
QW-BL013
Page 2
Comchip Technology CO., LTD.