CDBL1100 [COMCHIP]
SMD Schottky Barrier Rectifier; SMD肖特基整流器
| 型号： | CDBL1100 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Rectifier |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD SScchhoottttkkyy Barrier Rectifier
CCOOMMCCHHIIPP
www.comchiptech.com
CDBL120 Thru CDBL1100
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Guard Ring Protection
0.205(5.2)
0.195(4.8)
0.022(0.55)
Max.
Low Forward voltage and power loss for
high efficiency
Mechanical data
0.105(2.67)
0.095(2.40)
Case: DO-213AB molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.116 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
CDBL120
CDBL140
CDBL180
CDBL1100
Symbol
CDBL160
Parameter
Unit
VRRM
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
20
20
14
40
40
28
80
80
56
100
100
70
V
V
V
60
60
42
VDC
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
30
I o
V F
I R
1.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 1.0 A
0.70
0.85
0.50
V
Max. DC ReverseCurrent at RatedDC
Blocking Voltage
Ta=25
C
0.5
mA
10
5
C
Ta=100
75
35
R
JA
Max.l. Thermal Resistance(Note 1)
C /W
R
JT
- 5 5 t o + 1 5 0
T j
- 5 5 t o + 1 2 5
Operating Junction Temperature
C
TSTG
Storage Temperature
- 5 5 t o + 1 5 0
C
Note 1: Thermal resistance from junction to ambient and junction to terminals.
Page 1
MDS0211007A
SSMMDD SScchhoottttkkyy Barrier Rectifier
CCOOMMCCHHIIPP
www.comchiptech.com
Rating and Characteristic Curves (CDBL120 Thru CDBL1100)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
100
CDBL120-140
CDBL160
10
10
CDBL180-1100
1
1
Tj=75 C
0.1
0.1
Tj=25 C
0.01
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
1.9 2.1
0
20
40
60
80
100
120
140
160
180
200
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Current Derating Curve
350
300
250
200
150
100
=1MHz and applied
4VDC reverse voltage
1.2
1.0
0.8
C
D
B
C
L
D
1
B
6
L
0
1
-
1
1
2
0.6
0.4
0.2
0
0
0
-
0
1
4
0
50
0
160
0.01
0.1
1.0
10
100
20
40
60
80
100
120
140
Ambient Temperature ( C)
Reverse Voltage (V)
Fig. 5 - Non repetitive Forward
Surge Current
30
8.3mS Single HalfSine
Wave JEDEC methode
24
18
Tj=25 C
12
6
0
1
5
10
50
1 00
Number of Cyclesat 60Hz
Page 2
MDS0211007A
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