CDBM260-HF [COMCHIP]
SMD Schottky Barrier Rectifiers; SMD肖特基势垒整流器
| 型号： | CDBM260-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Rectifiers
CDBM220-HF Thru CDBM2100-HF
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen free
Features
Mini SMA/SOD-123
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
-Low profile surface mounted application
in order to optimize board space.
-Tiny plastic SMD package.
0.071(1.8)
0.055(1.4)
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
0.126(3.2)
0.110(2.8)
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
0.067(1.7)
0.051(1.3)
Mechanical data
0.035(0.9) Typ.
0.035(0.9) Typ.
-Case: Molded plastic, JEDEC MiniSMA/SOD-123.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
Dimensions in inches and (millimeter)
-Weight:0.027 gram(approx.).
Maximum Ratings (at TA=25°C unless otherwise noted)
CDBM
CDBM
CDBM
CDBM
CDBM
CDBM
CDBM
Symbol
VRRM
VRMS
VR
Unit
V
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
240-HF
260-HF
280-HF
230-HF
250-HF
2100-HF
220-HF
20
30
21
40
28
40
50
35
50
60
42
60
80
56
80
100
V
14
20
70
Continuous reverse voltage
Maximum forward voltage @IF=2.0A
V
100
30
V
VF
0.50
0.70
0.85
A
Forward rectified current
IO
2.0
50
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
IFSM
IR
A
@TA=25OC
Reverse current on VR=VRRM
0.5
10
mA
@TA=125OC
OC/W
pF
Typ. thermal resistance, junction to ambient air
RθJA
CJ
85
Typ. diode junction capacitance (Note 1)
Operating junction temperature
160
OC
OC
-55 to +125
-55 to +150
-65 to +175
TJ
Storage temperature
TSTG
Note 1: f=1MHz and applied 4V DC reverse voltage.
REV:A
Page 1
QW-JB003
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
Rating and Characteristic Curves (CDBM220-HF Thru CDBM2100-HF)
Fig.1 - Typical Forward Current
Derating Curve
Fig.2 - Typical Forward Characteristics
2.3
2.0
100
F
H
-
0
4
2
M
B
D
C
~
10
1
F
C
H
-
0
C
D
2
2
D
B
M
F
1
B
H
-
B
M
D
0
C
6
M
2
2
M
5
2
B
D
0
2
0
C
F
H
~
-
-
0
0
F
H
H
-
0
-
H
F
5
2
2
M
F
~
M
B
B
~
C
D
D
C
C
C
~
D
F
H
D
-
B
0
8
B
M
2
M
M
B
2
D
2
1
C
1.0
4
0
0
0
-
-
H
H
F
F
0.1
0.01
TJ=25 O
C
Pulse width 300μs
1% duty cycle
0
1.5
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0
50
100
150
200
TA, Ambient Temperature (OC)
VF, Forward Voltage (V)
Fig.3 - Maximum Non-repetitive Peak
Fig.4 - Typical Junction Capacitance
Forward Surge Current
50
700
TJ=25 O
C
8.3ms single half
sine wave, JEDEC
method
600
500
40
30
20
10
400
300
200
100
0
0
1
10
100
.01
0.1
1
10
100
Number of Cycles at 60Hz
VR, Reverse Voltage (V)
Fig.5 - Typical Reverse Characteristics
100
10
1
TJ=75 O
C
C
.1
TJ=25 O
60
.01
0
20
40
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
REV:A
Page 2
QW-JB003
Comchip Technology CO., LTD.
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