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CDBMH3100-G [COMCHIP]

SMD Schottky Barrier Rectifiers; SMD肖特基势垒整流器
CDBMH3100-G
型号： CDBMH3100-G
厂家： COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述：

SMD Schottky Barrier Rectifiers
SMD肖特基势垒整流器
文件： 总4页 (文件大小：99K)
中文：  中文翻译
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SMD Schottky Barrier Rectifiers  
CDBMH320-G Thru. CDBMH3100-G  
Reverse Voltage: 20 to 100 Volts  
Forward Current: 3.0 Amp  
RoHS Device  
Features  
SOD-123T  
0.154(3.90)  
0.138(3.50)  
-Batch process design, excellent power dissipation offers  
0.012(0.30) Typ.  
better reverse leakage current and thermal resistance.  
-Low profile surface mounted application in order to  
optimize board space.  
0.071(1.80)  
0.055(1.40)  
-Low power loss, high efficiency.  
-High current capability, low forward voltage drop.  
-High surge capability.  
-Guardring for overvoltage protection.  
0.067(1.70)  
0.051(1.30)  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip, metal silicon junction.  
0.008(0.20) Typ.  
0.096(2.40)  
0.080(2.00)  
0.040(0.10)  
0.024(0.60)  
-Heat sink bottom.  
-Lead-free part meets environmental standards of  
0.024(0.60) Typ.  
MIL-STD-19500/228.  
0.064(1.60)  
0.048(1.20)  
0.036(0.90)  
0.020(0.50)  
Mechanical data  
-Case: Molded plastic, SOD-123T/Mini SMA.  
0.052(1.30)  
0.036(0.90)  
0.0375(0.95)  
0.0296(0.75)  
-Terminals: Solderable per MIL-STD-750,  
0.044(1.10)  
0.028(0.70)  
method 2026.  
Dimensions in inches and (millimeter)  
-Polarity: Indicated by cathode band.  
-Weight: 0.018 grams approx.  
Maximum Ratings (at TA=25°C unless otherwise noted)  
CDBMH CDBMH CDBMH CDBMH CDBMH CDBMH CDBMH  
Symbol  
VRRM  
VR  
Parameter  
Repetitive peak reverse voltage  
Continuous reverse voltage  
RMS voltage  
Unit  
V
320-G  
20  
330-G  
30  
340-G  
40  
350-G  
50  
360-G  
60  
380-G  
80  
3100-G  
100  
20  
14  
30  
21  
40  
28  
50  
35  
60  
42  
80  
56  
100  
70  
V
VRMS  
IO  
V
Max. Forward rectified current  
3.0  
A
Maximum forward voltage at IF=3.0A  
VF  
0.50  
0.70  
0.85  
V
A
Max. Forward surge current, 8.3ms single  
half sine-wave superimposed on rated  
load (JEDEC method)  
IFSM  
80  
VR=VRRM TJ=25°C  
Max.Reverse current  
IR  
IR  
0.2  
20  
mA  
VR=VRRM TJ=100°C  
Typ. Thermal resistance  
RθJC  
30  
°C/W  
PF  
250  
Typ. Diode Junction capacitance (Note 1)  
Operating temperature  
CJ  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
-65 to +175  
Storage temperature range  
TSTG  
Note : 1. F=1MHz and applied 4V DC reverse voltage  
REV:B  
Page 1  
QW-BB034  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
Rating and Characteristic Curves (CDBMH320-G Thru. CDBMH3100-G)  
Fig.1 - Typical Forward Current  
Derating Curve  
Fig.2 - Typical Forward Characteristics  
100  
10  
1
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0.1  
TJ=25°C  
Pulse Width 300uS  
1% Duty Cycle  
0.01  
0
1.5  
20  
40  
60  
80  
100  
120  
140  
160  
.1  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
Forward Voltage, (V)  
Ambient Temperature, (°C )  
Fig.3 - Maximum Non-repetitive  
Forward Surge Current  
Fig.4 - Typical Junction Capacitance  
100  
700  
f=1MHz  
Applied 4VDC  
reverse voltage  
TJ=25 O  
C
8.3ms single half sine  
wave, JEDEC method  
600  
500  
80  
60  
40  
20  
400  
300  
200  
100  
0
0
1
10  
100  
0.01  
0.1  
1
10  
100  
Number of Cycles at 60Hz  
Reverse Voltage, (V)  
Fig.5 - Typical Reverse Characteristics  
100  
10  
1
TJ=75 O  
C
0.1  
TJ=25 O  
C
0.01  
0
40  
80  
120  
160  
200  
Percent of Rated Peak Reverse Voltage, (%)  
REV:B  
Page 2  
QW-BB034  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
Reel Taping Specification  
d
P0  
P1  
E
F
Index hole  
T
W
B
P
A
C
1
2
0
o
D2  
D1  
D
W1  
Trailer  
.......  
Device  
.......  
Leader  
.......  
.......  
.......  
Start  
End  
.......  
.......  
.......  
10 pitches (min)  
10 pitches (min)  
Direction of Feed  
SYMBOL  
A
B
C
d
D
D1  
D2  
(mm)  
1.50 ± 0.10  
178 ± 2.00  
7.00 ± 0.079  
62.0 MIN.  
2.441 MIN.  
13.0 ± 0.50  
Mini-SMA/SOD-123T  
1.90 ± 0.10  
3.90 ± 0.10  
1.68 ± 0.10  
(inch)  
0.059 ± 0.004  
0.512 ± 0.020  
0.075 ± 0.04  
0.153 ± 0.04  
0.066 ± 0.04  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
T
Mini-SMA/SOD-123T  
0.23 ± 0.10  
8.00 ± 0.30  
1.75 ± 0.10  
3.50 ± 0.10  
4.00 ± 0.10  
4.00 ± 0.10  
0.157 ± 0.004  
2.00 ± 0.10  
0.079 ± 0.004  
11.40 ± 1.0  
0.449 ± 0.039  
(inch)  
0.069 ± 0.004  
0.138 ± 0.004  
0.157 ± 0.004  
0.009 ± 0.004  
0.315 ± 0.012  
REV:B  
Page 3  
QW-BB034  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Rectifiers  
Pinning information  
Simplified outline  
2
Symbol  
Pin  
PIN 1 Cathode  
PIN 2 Anode  
1
2
1
Marking Code  
Marking Code  
Part Number  
CDBMH320-G  
CDBMH330-G  
CDBMH340-G  
CDBMH350-G  
CDBMH360-G  
CDBMH380-G  
CDBMH3100-G  
32  
33  
XX  
34  
35  
xx / xxx = Product type marking code  
36  
38  
310  
Suggested PAD Layout  
Mini-SMA/SOD-123T  
SIZE  
(mm)  
1.00  
1.00  
1.70  
0.50  
1.50  
1.10  
0.90  
0.85  
0.60  
(inch)  
0.040  
0.040  
0.067  
0.020  
0.060  
0.044  
0.036  
0.034  
0.024  
I
A
B
C
D
E
F
G
H
I
D
F
E
C
H
G
A
B
Standard Packaging  
REEL PACK  
Case Type  
REEL  
Reel Size  
( pcs )  
(inch)  
Mini-SMA  
2,500  
7
/SOD-123T  
REV:B  
Page 4  
QW-BB034  
Comchip Technology CO., LTD.  

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