CDBV3-0720-G [COMCHIP]

SMD Schottky Barrier Diode; SMD肖特基势垒二极管
CDBV3-0720-G
型号: CDBV3-0720-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

SMD Schottky Barrier Diode
SMD肖特基势垒二极管

二极管
文件: 总4页 (文件大小:122K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Schottky Barrier Diode  
CDBV3-0720-G  
Io = 700 mA  
VR = 20 Volts  
RoHS Device  
SOT-323  
Features  
0.087(2.20)  
0.079(2.00)  
-Low-power rectification  
-For switching power supply  
-Ultra low VF  
3
0.053(1.35)  
0.045(1.15)  
1
2
0.055(1.40)  
0.047(1.20)  
Mechanical data  
-Case:SOT-323, molded plastic.  
0.006(0.15)  
0.003(0.08)  
-Terminals:Soldeable per MIL-STD-750,  
method 2026.  
0.039(1.00)  
0.035(0.90)  
0.096(2.45)  
0.085(2.15)  
-Mounting position: Any.  
-Approx.weight: 0.0055 gram.  
0.004(0.10)  
0.000(0.00)  
0.016(0.40)  
0.008(0.20)  
0.018(0.46)  
0.010(0.26)  
Circuit Diagram  
3
Dimensions in inches and (millimeter)  
2
1
Maximum Rating (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Non-Repetitive Peak Reverse Voltage  
DC Blocking Voltage  
Limit  
25  
Unit  
V
VRM  
VR  
20  
V
Average Rectified Output Current  
Power Dissipation  
IO  
PD  
Tj  
700  
150  
125  
mA  
mW  
°C  
Junction Temperature  
Storage Temperature  
TSTG  
-55~+150  
°C  
Electrical Characteristics(at Ta=25°C unless otherwise noded)  
Symbol  
Parameter  
Test Conditions Min Max Unit  
Reverse breakdown voltage  
V(BR)  
IR =200μA  
20  
V
μA  
V
Reverse voltage leakage current  
Forward voltage  
IR  
VR = 20V  
200  
VF  
IF = 700mA  
0.49  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-BB057  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Diode  
RATING AND CHARACTERISTIC CURVES (CDBV3-0720-G)  
Fig.1 - Forward characteristics  
Fig.2 - Reverse characteristics  
10000  
1000  
100  
700  
100  
TA=100°C  
10  
1
10  
1
TA=25°C  
0.1  
0
100  
200  
300  
400  
500  
0
5
10  
15  
20  
Forward voltage (mV)  
Reverse voltage (V)  
Fig.3 - Capacitance characteristics  
Fig.4 - Power derating curve  
200  
300  
250  
200  
150  
100  
50  
TA=25 OC  
f=1MHz  
150  
100  
50  
0
0
0
25  
50  
75  
100  
125  
0
5
10  
15  
20  
Reverse voltage (V)  
Ambient temperature (°C)  
REV:A  
Page 2  
QW-BB057  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Diode  
Reel Taping Specification  
P0  
P1  
T
W
3
XXX  
1
2
C
A
P
1
2
0
o
D2  
D1  
D
W1  
SYMBOL  
(mm)  
A
B
C
d
D
D1  
D2  
SOT-323  
SOT-323  
2.25 ± 0.05  
2.55 ± 0.05  
1.19 ± 0.05  
1.55 ± 0.10  
178 ± 2.00  
54.40 ± 1.00  
13.00 ± 1.00  
(inch)  
0.089 ± 0.002  
0.100 ± 0.002  
0.047 ± 0.002  
0.061 ± 0.004  
7.008 ± 0.079  
0.512 ± 0.039  
2.142 ± 0.039  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
8.00 + 0.30 /0.10  
1.75 ± 0.10  
3.50 ± 0.10  
4.00 ± 0.10  
4.00 ± 0.10  
0.157 ± 0.004  
2.00 ± 0.10  
12.30 ± 1.00  
(inch)  
0.069 ± 0.004  
0.138 ± 0.004  
0.157 ± 0.004  
0.079 ± 0.004 0.315 + 0.012 /0.004  
0.484 ± 0.039  
REV:A  
Page 3  
QW-BB057  
Comchip Technology CO., LTD.  
SMD Schottky Barrier Diode  
Marking Code  
3
Marking Code  
3B  
Part Number  
CDBV3-0720-G  
XX  
1
2
xx = Product type marking code  
Suggested PAD Layout  
B
SOT-323  
SIZE  
(mm)  
(inch)  
A
A
B
C
0.80  
0.031  
D
0.50  
1.30  
0.020  
0.051  
D
2.20  
0.087  
C
Standard Packaging  
REEL PACK  
Case Type  
REEL  
Reel Size  
( pcs )  
(inch)  
3,000  
SOT-323  
7
REV:A  
Page 4  
QW-BB057  
Comchip Technology CO., LTD.  

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