CDSV6-16-G_12 [COMCHIP]
SMD Switching Diode Arrays; SMD开关二极管阵列
| 型号： | CDSV6-16-G_12 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Switching Diode Arrays |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Switching Diode Arrays
CDSV6-16-G/4148-G
Forward Current: 0.15A
Reverse Voltage: 75V
RoHS Device
SOT-363
Features
0.087(2.20)
0.071(1.80)
-Fast switching speed.
0.053(1.35)
0.045(1.15)
-For general purpose swicthing applications.
-High conductance.
0.006(0.15)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
0.096(2.45)
0.085(2.15)
Marking: KA2
C1
C2
A2
C3
Diagram:
0.004(0.10)max
0.014(0.35)
0.006(0.15)
0.010(0.25)min
Dimensions in inches and (millimeters)
A1
A3
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Parameter
Limits
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
75
V
RMS reverse voltage
VR(RMS)
IFM
53
V
Forward continuous current
Averaged rectified output current
300
150
mA
mA
IO
Peak forward surge current
@t=1.0μS
@t=1.0S
2.0
1.0
IFSM
A
Power dissipation
PD
RθJA
200
625
mW
O
Thermal resistance, junction to ambient air
Operation and storage temperature range
C/W
OC
TJ, TSTG
-65 ~ +150
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max Unit
Reverse breakdown voltage
IR=1μA
V(BR)R
75
V
IF=1mA
VF1
VF2
VF3
VF4
0.715
0.855
IF=10mA
IF=50mA
IF=150mA
V
Forward voltage
1.0
1.25
Reverse leakage current
VR=20V
VR=75V
IR1
IR2
25
1
nA
μA
Capacitance between terminals
Reverse recovery time
VR=0V, f=1.0MHz
CT
trr
2
4
pF
nS
IF=IR=10mA to Irr=0.1×IR, RL=100Ω
REV:A
Page 1
QW-B0032
SMD Switching Diode Arrays
ELECTRICAL CHARACTERISTIC CURVES (CDSV6-16-G/4148-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
1
0.1
10000
1000
TA=125 OC
TA=150 OC
TA=150 OC
TA=75 O
TA=25 O
C
C
100
10
1
TA=25 O
C
TA=75 O
C
TA=0 O
C
TA=0 O
C
0.01
0.001
TA=-40 OC
TA=-40 OC
0.1
20
40
60
80
100
1.5
0
0
0.5
1.0
VF, Instantaneous Forward Voltage (V)
VR, Instantaneous Reverse Voltage (V)
Fig.3 - Capacitance Between
Terminals Characteristics
2.0
f=1MHz
1.6
1.2
0.8
0.4
0
0
10
20
30
40
VR, Reverse Voltage (V)
REV:A
Page 2
QW-B0032
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