CEFB202 [COMCHIP]
SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器
| 型号： | CEFB202 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Efficient Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
CEFB201 Thru CEFB205
Reverse Voltage: 50 - 600 Volts
Forward Current: 2.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
SMB/DO-214AA
Plastic package has Underwriters Lab.
flammability classification 94V-0
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
Mechanical Data
0.096(2.44)
0.083(2.13)
Case: JEDEC DO-214AA molded plastic
0.008(0.20)
0.203(0.10)
0.050(1.27)
0.030(0.76)
Terminals: solderable per MIL-STD-750,
method 2026
0.220(5.59)
0.200(5.08)
Polarity: Color band denotes cathode
end
Dimensions in inches and (millimeter)
Mounting position: Any
Approx. Weight:0.093 gram
Maximum Ratings and Electrical Characterics
CEFB
201
CEFB
202
CEFB
203
CEFB
204
CEFB
205
Unit
Symbol
VRRM
VDC
Parameter
600
600
420
50
50
35
200
200
140
400
400
280
100
100
70
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
V
V
V
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
35
40
I o
2.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 2.0 A
0.875
1.1
1.25
V F
V
Trr
Reverse recovery time
25
35
50
nS
Max. DC ReverseCurrent at RatedDC
I R
5.0
Blocking Voltage
Ta=25 C
Ta=100C
uA
250
15
R
JL
Max. Thermal Resistance(Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
Page 1
MDS0210023A
SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CEFB201 Thru CEFB205)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
100
10
CEFB201-203
10
1.0
Tj=125 C
CEFB204
CEFB205
1.0
Tj=75 C
0.1
0.01
0.1
Tj=25 C
Tj=25 C
Pulse width 300uS
4% duty cycle
0. 01
0
0.001
20
40
60
80 100 120 140
0
0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
200
50
8.3mS Single HalfSine
Wave JEDEC methode
100
40
30
Tj=25 C
Tj=25 C
20
10
10
0
2
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cyclesat 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
trr
50
W
10W
NONINDUCTIVE
2.4
2.0
1.6
1.2
NONINDUCTIVE
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+0.5A
(
)
(+)
0
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
-0.25A
(
)
(+)
Single Phase
0.8
1W
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
INDUCTIVE
0.4
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
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MDS0210023A
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