CEGS0324V-G [COMCHIP]
Bidirectional ESD / Transient Suppressor; 双向ESD /瞬态抑制器型号: | CEGS0324V-G |
厂家: | COMCHIP TECHNOLOGY |
描述: | Bidirectional ESD / Transient Suppressor |
文件: | 总2页 (文件大小:149K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bidirectional ESD / Transient Suppressor
CE Series -G (RoHS Device)
Features
ꢀ (16kV) IEC 61000-4-2 rating
ꢀ Surface mount package
ꢀ High component density
SOT23-6
-VBD
0V
+VBD
Applications
ꢀ ESD suppression
ꢀ Transient suppression
ꢀ Automotive CAN Bus
SOT23-5
Schematic
SOT-23-3
4
5
4
5
6
3
2
1
1
4
3
3
1
4
5
6
3
2
1
3
2
1
2
2
CEG – (SOT-143)
CEA – (SOT23-3)
CEB – (SOT23-6)
CEC – (SOT23-6)
CED – (SOT23-5)
Application Schematic
Gnd.
Vp (Transient)
Connector
Transceiver
Vclamp
0 v
Specifications (T = 25oC)
a
Symbol
To
Characteristic
Min. Max. Units
o
Operation Temperature Range
-55 +125
C
Bidrectional ESD / Transient Suppressor
Specifications:( Ta = 25oC )
36V Characteristic PRELIMINARY
Symbol
VBD
IL
Characteristic
Diode breakdown voltage
Leakage current
Min
38
Typ
40
0.1
5
Max
2.0
Units
V
uA
pF
V
kV
A
Test Condition
IF = 1 ma
36v
CT
Capacitance
@ 1Mhz
8kV event
IEC 61000-4-2
8 / 20 us
VESD
VPV
Channel clamp voltage
Peak ESD voltage capability
Peak Pulse Current
-
+ 40
16
15
Ipp *
24V Characteristic (CAN bus)
Symbol
VBD
IL
Characteristic
Min
25
Typ
28
0.1
10
-
Max
2.0
Units
V
uA
pF
V
kV
A
Test Condition
IF = 1 ma
24v
@ 1Mhz
8kV event
IEC 61000-4-2
8 / 20 us
Diode breakdown voltage
Leakage current
Capacitance
CT
VESD
VPV
Ipp *
Channel clamp voltage
Peak ESD voltage capability
Peak Pulse Current
+ 25
16
15
12V Characteristic PRELIMINARY
Symbol
VBD
IL
Characteristic
Diode breakdown voltage
Leakage current
Min
14
Typ
17
0.1
12
-
Max
2.0
Units
V
uA
pF
V
kV
A
Test Condition
IF = 1 ma
12v
@ 1Mhz
8kV event
IEC 61000-4-2
8 / 20 us
CT
Capacitance
VESD
VPV
Channel clamp voltage
Peak ESD voltage capability
Peak Pulse Current
+ 17
16
15
Ipp *
5V0 Characteristic
Symbol
Characteristic
Min
5.1
Typ
7.0
+0.1
15
Max
Units
V
uA
pF
V
kV
A
Test Condition
IF = 1 ma
5v
@ 1Mhz
8kV event
IEC 61000-4-2
8 / 20 us
VBD
IL
CT
Diode breakdown voltage
Leakage current
Capacitance
+ 2.0
20
+ 7.0
16
5.1
VESD
VPV
Ipp *
Channel clamp voltage
Peak ESD voltage capability
Peak Pulse Current
-
* one diode conducting
Package Information:
P
p
p
p
S05
W
S06
W
S03
S14
W
W
P
0.7
Dimensions in ( mm ):
L
L
L
L
Code
Power
Pins
L + 0.2
W + 0.2
p + 0.1
P + 0.1
Pkg. Height
d + 0.1
S03
S05
S06
S14
225 mw
225 mw
225 mw
225 mw
3
5
6
4
2.90
2.90
2.90
2.90
2.30
2.80
2.80
2.80
-
1.90
1.90
-
1.0
1.0
1.0
1.0
0.43
0.43
0.43
0.43
0.95
0.95
-
1.90
Ordering Information:
CEA
S03
CEA
Type
5V0
-G
CEB
CEC
CED
CEG
Package Code
From table above
Voltage
RoHS Compliant
5V0 / 12V
12V / 24V
相关型号:
©2020 ICPDF网 联系我们和版权申明