CFRC301-G_12 [COMCHIP]
SMD Fast Recovery Rectifiers; 贴片快恢复二极管
| 型号： | CFRC301-G_12 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Fast Recovery Rectifiers
CFRC301-G Thru. CFRC307-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 3.0 Amp
RoHS Device
Features
DO-214AB (SMC)
-Ideal for surface mount applications.
-Easy pick and place.
0.280(7.11)
0.260(6.60)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.245(6.22)
0.220(5.59)
0.124(3.15)
0.108(2.75)
-Fast recovery time: 150~500nS.
-Low leakage current.
0.320(8.13)
0.305(7.75)
Mechanical data
0.012(0.31)
0.006(0.15)
-Case: JEDEC DO-214AB, molded plastic.
0.103(2.62)
0.079(2.00)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.050(1.27)
0.030(0.76)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
CFRC
301-G
CFRC
302-G
CFRC
303-G
CFRC
304-G
CFRC
305-G
CFRC
306-G
CFRC
307-G
Parameter
Symbol
Units
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
VRRM
VDC
50
50
35
100
100
70
200
200
140
400
400
280
600
600
420
800
800
560
1000
1000
700
V
V
V
VRMS
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
IO
100
A
A
3.0
1.3
Max. average forward current
Max. instantaneous forward voltage at
3.0A
VF
Trr
V
150
500
250
nS
Reverse recovery time
Max. DC reverse current at TA=25 OC
rated DC blocking voltage TA=125 OC
5.0
250
IR
μA
RθJA
TJ
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
50
150
OC/W
OC
OC
TSTG
-55 to +150
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square land area.
REV:A
Page 1
QW-BF004
Comchip Technology CO., LTD.
SMD Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CFRC301-G thru CFRC307-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
100
100
10
TJ=125 OC
10
1
0.1
TJ=25 O
C
1
TJ=25 O
C
Pulse width 300μS
4% duty cycle
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
0
30
60
90
120
150
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
140
100
TJ=25 O
C
TJ=25 O
C
f=1MHz
120
100
80
60
40
20
0
8.3ms single half sine
wave, JEDEC method
Vsig=50mVp-p
80
60
40
20
0
0.1
1
10
100
1000
1
10
100
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
trr
50Ω
10Ω
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
(+)
0
D.U.T.
25Vdc
(approx.)
(-)
PULSE
GENERATOR
(NOTE 2)
-0.25A
(+)
Single phase
1Ω
NON-
OSCILLLISCOPE
(NOTE 1)
Half wave 60Hz
INDUCTIVE
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
0
25
50
75
100
125
150
175
1cm
Ambient Temperature ( OC)
Set time base for
50 / 10nS / cm
REV:A
Page 2
QW-BF004
Comchip Technology CO., LTD.
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