CFRM103 [COMCHIP]
SMD Fast Recovery Rectifier; 贴片快恢复整流二极管
| 型号： | CFRM103 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
CFRM101 Thru CFRM107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
MINI SMA
0.161(4.10)
0.146(3.70)
0.012(0.30) Typ.
Exceeds environmental standard MIL-S-
19500/228
0.071(1.80)
0.055(1.40)
Low leakage current
0.110(2.80)
0.094(2.40)
Mechanical data
Case: Mini SMA/SOD-123 molded plastic
0.063(1.60)
0.055(1.40)
Terminals: solderable per MIL-STD-750,
method 2026
0.035(0.90) Typ.
0.035(0.90) Typ.
Polarity: Color band denotes cathode
end
Mounting position: Any
Dimensions in inches and (millimeter)
Approx. Weight: 0.04 gram
Maximum Ratings and Electrical Characterics
CFRM
101
CFRM CFRM
CFRM CFRM
CFRM CFRM
Unit
Symbol
VRRM
VDC
Parameter
102
103
104
105
106
107
200
400
600
50
50
35
800
1000
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
100
V
V
V
200
400
600
800
560
1000
700
100
70
VRMS
140
280
420
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
30
I o
1.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 1.0 A
1.3
V F
V
Trr
Reverse recovery time
100
nS
250
500
Max. DC ReverseCurrent at RatedDC
C
I R
5.0
50
Blocking Voltage
Ta=25
uA
Ta=100 C
32
R
JA
Typical. ThermalResistance (Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to ambient.
Page 1
MDS0208017B
SSMMDD FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CFRM101 Thru CFRM107)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
1000
100
Tj=125 C
10
100
10
1
Tj=25 C
0.1
1.0
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80 100 120 140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non repetitive Forward
Surge Current
35
30
25
20
50
8.3mS Single HalfSine
Wave JEDEC methode
=1MHz and applied
4VDC reverse voltage
40
30
Tj=25 C
15
20
10
10
5
0
0
0.01
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cyclesat 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
50
W
10W
NONINDUCTIVE
1.2
1.0
0.8
0.6
NONINDUCTIVE
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+0.5A
(
)
(+)
0
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
-0.25A
(
)
(+)
Single Phase
0.4
1W
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
INDUCTIVE
0.2
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
Page 2
MDS0208017B
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