CJ1012-G [COMCHIP]
MOSFET;
| 型号： | CJ1012-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
CJ1012-G
N-Channel
RoHS Device
SOT-523
G : Gate
S : Source
D : Drain
Features
- High-Side Switching.
0.067(1.70)
0.059(1.50)
3
- Low On-Resistance.
- Low Threshold.
0.014(0.35)
0.010(0.25)
0.035(0.90)
0.028(0.70)
- Fast Switching Speed.
1
2
0.020(0.50)TYP.
- ESD protected up to 2KV.
0.043(1.10)
0.035(0.90)
Mechanical data
0.008(0.20)
0.004(0.10)
- Case: SOT-323, molded plastic.
0.069(1.75)
0.057(1.45)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
0.018(0.46)
0.010(0.26)
0.031(0.80)
0.028(0.70)
G
1
2
3
D
0.004(0.10) max
0.010(0.25)
0.006(0.15)
S
Dimensions in inches and (millimeter)
Maximum Rating (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain-source voltage
Gate-source voltage
Drain current-continuous
VDSS
VGS
20
±12
V
V
ID(DC)
500
mA
mA
Drain Current-pulsed (note1)
IDM(pulse)
1000
150
Power dissipation (note2, TA=25°C)
Max. Power dissipation (note3, TC=25°C)
Thermal resistance from junction to ambient
Thermal resistance from junction to case
Junction temperature
PD
mW
275
RθJA
RθJC
TJ
833
°C/W
°C/W
°C
455
150
Storage temperature
TSTG
-55 to +150
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-BTR44
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max
Units
On/Off States
Drain-source breakdown voltage
Gate-threshold voltage
VGS =0V , ID=250µA
VDS =VGS , ID=250µA
VDS =0V , VGS=±4.5V
VDS =16V , VGS=0V
VGS=4.5V , ID=600mA
VGS=2.5V , ID=500mA
VDS=10V , ID=400mA
V(BR) DSS
VGS(th)
IGSS
20
V
V
0.45
1.2
±1
-body leakage current
Gate
µA
Zero gate voltage drain current
IDSS
100
700
850
nA
mΩ
RDS(on)
gFS
Drain-source on-state resistance
Forward transconductance
Dynamic Characteristics
Input capacitance (note 4)
Output capacitance (note 4)
Reverse transfer capacitance (note 4)
Total gate charge
1
S
ciss
Coss
Crss
Qg
100
16
VDS=16V , VGS=0V,
f=1MHZ
pF
nC
12
750
75
VDS=10V , VGS=4.5V,
ID=250mA
Gate-source charge
Qgs
Qgd
Gate-drain charge
225
Switching Times (note 4)
Turn-on delay time
td(on)
5
5
Rise time
tr
VDD=10V , ID=200mA
RL=47Ω ,
nS
Turn-off delay time
td(off)
25
11
VGS=4.5V , RG=10Ω
Fall time
tf
Drain-source diode characteristics
Drain-source diode forward voltage (note 5)
IS=0.15A , VGS=0V
VSD
1.2
V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25°C.
3. This test is performed with infinite heat sink at Tc=25°C.
4. These parameters have no way to verify.
5. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-BTR44
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJ1012-G)
Fig.1 - Output Characteristics
Fig.2 - Transfer Characteristics
500
400
300
200
5
5.5V
Pulsed
TA=25°C
VDS=5.0V
Pulsed
4.5V
3.5V
4
3
2
1
0
TA=100°C
2.5V
TA=25°C
100
0
VGS=1.5V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain to Soruce Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
600
500
400
300
200
100
0
500
400
300
200
Pulsed
TA=25°C
Pulsed
TA=25°C
VGS=2.5V
ID=600mA
VGS=4.5V
100
200
400
600
800
1
2
3
4
5
Drain Current, ID (mA)
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
Fig.6 - Threshold Voltage
500
0.85
0.80
0.75
0.70
Pulsed
TA=25°C
100
10
1
ID=250μA
0.65
0.60
0.1
25
50
75
100
125
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage, VSD(V)
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-BTR44
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P0
P1
T
W
C
A
P
1
2
0
o
D2
D1
D
W1
SYMBOL
A
B
C
d
D
D1
D2
SOT-523
SOT-523
(mm)
1.85 ± 0.05
1.85 ± 0.05
0.875 ± 0.05
1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
0.512 ± 0.039
(inch)
0.073 ± 0.002
0.073 ± 0.002
0.034 ± 0.002
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
8.00 + 0.30 /–0.10
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
0.157 ± 0.004
2.00 ± 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-BTR44
Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Marking Code
Part Number
CJ1012-G
C
C
1
2
Suggested PAD Layout
SOT-523
SIZE
B
(mm)
0.60
0.50
0.40
1.00
1.24
1.84
(inch)
0.024
0.020
0.016
0.039
0.049
0.072
A
B
C
D
E
F
A
C
E
F
D
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-523
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
QW-BTR44
Comchip Technology CO., LTD.
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