CJS8810-HF [COMCHIP]
MOSFET;
| 型号： | CJS8810-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总5页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
8
CJS8810-HF
N-Channel
5
1
RoHS Device
Halogen Free
4
TSSOP8
Features
- Uses advanced trench technology.
0.122(3.10)
0.114(2.90)
0.047(1.20)
MAX.
- Excellent RDS(ON) and low gate charge.
Mechanical data
- Case: TSSOP8, molded plastic.
8
1
7
2
6
3
5
Circuit diagram
0.177(4.50)
0.169(4.30)
0.258(6.55)
0.246(6.25)
D1/D2 S2 S2 G2
8
7
6
5
4
0.028(0.70)
0.020(0.50)
0.008(0.20)
0.004(0.09)
0.012(0.30)
0.007(0.19)
0.026(0.65)
BSC.
1
2
3
4
D1/D2 S1 S1 G1
Dimensions in inches and (millimeter)
V(BR)DSS
RDS(on) MAX
ID
20mΩ@10V
22mΩ@4.5V
24mΩ@3.8V
26mΩ@2.5V
35mΩ@1.8V
20V
7A
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain-source voltage
Gate-source voltage
Continuous drain current
VDS
VGS
ID
20
±12
V
V
7
A
Pulsed drain current (Note 1)
Total power dissipation (Note 2)
IDM
30
A
PD
0.7
W
Thermal resistance from junction to ambient
Junction temperature range
RθJA
TJ
125
°C/W
°C
°C
°C
150
Storage temperature range
TSTG
TL
-55 to +150
260
Lead temperature for soldering purposes(1/8’’ from case for 10s)
Note: 1. Repetitive rating：Pulse width limited by junction temperature.
Note: 2. Device mounted on FR4 substrate pcb board 2 oz copper with minimum recommended pad layout.
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max
Units
Static Parameters
Drain-source breakdown voltage
Zero gate voltage drain current
VGS =0V , ID=250µA
VDS =16V , VGS=0V
VDS =0V , VGS=±4.5V
VDS =0V , VGS=±8V
VDS =VGS , ID=250µA
VGS=10V , ID=7A
VGS=4.5V , ID=6.6A
VGS=3.8V , ID=6A
VGS=2.5V , ID=5.5A
VGS=1.8V , ID=5A
VDS=5V , ID=7A
V(BR) DSS
IDSS
20
V
1
±1
±10
1
µA
Gate-body leakage current
µA
V
IGSS
Gate threshold voltage (Note 1)
VGS(th)
0.4
14
16
17
20
28
20
22
24
26
35
Drain-source on-resistance (Note 1)
RDS(on)
mΩ
gFS
Forward transconductance (Note 1)
Diode forward voltage (Note 1)
Dynamic Parameters (Note 2)
Input capacitance
9
S
V
IS=1A , VGS=0V
VSD
1
Ciss
Coss
Crss
Qg
1150
185
145
15
VDS=10V , VGS=0V,
f=1MHZ
Output capacitance
pF
nC
Reverse transfer capacitance
Total gate charge
VDS=10V , VGS=4.5V,
ID=7A
Gate-source charge
Qgs
Qgd
0.8
Gate-drain charge
3.2
Switching Parameters (Note 2)
Turn-on delay time
td(on)
6
Rise time
tr
13
52
16
VGS=5V , VDD=10V
RL=1.35Ω , RGEN=3Ω
nS
Turn-off delay time
td(off)
Fall time
tf
Notes:
1. Pulse test: Pulse width≤300µs, Duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJS8810-HF)
Fig.1 - Output Characteristics
Fig.2 - Transfer Characteristics
10
9
8
20
Pulsed
10V
VDS=16V
Pulsed
3.0V
2.0V
15
10
5
7
6
5
4
TA=100°C
1.5V
3
2
1
0
VGS=1.2V
TA=25°C
0
0
2
4
6
8
10
0
0.5
1.0
1.5
Drain to Soruce Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
Fig.3 - RDS(ON) — ID
50
40
30
20
10
350
300
250
200
150
100
50
Pulsed
TA=25°C
Pulsed
TA=25°C
VGS=1.8V
VGS=2.5V
VGS=10V
ID=7A
0
1
2
3
4
5
6
7
2
4
6
8
10
Drain Current, ID (A)
Gate to Source Voltage, VGS (V)
Fig.5 - IS — VSD
Fig.6 - Threshold Voltage
800
700
600
500
400
7
Pulsed
TA=25°C
1
0.1
0.01
1E-3
1E-4
ID=250μA
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
Source to Drain Voltage, VSD (V)
Junction Temperature, TJ (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 3
QW-JTR15
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P0
P1
T
W
B
C
P
A
1
2
0
o
D2
D1
D
W1
Trailer Tape
50±1 Empty Pockets
Leader Tape
50±1 Empty Pockets
Components
SYMBOL
(mm)
A
B
C
d
D
D1
D2
TSSOP8
TSSOP8
6.76 ± 0.10
3.30 ± 0.10
1.20 ± 0.10
1.50 ± 0.10
330 ± 1.00
100 ± 1.00
13.00 ± 1.00
0.512 ± 0.039
(inch)
0.266 ± 0.004
0.130 ± 0.004
0.047 ± 0.004
0.059 ± 0.004
13.00 ± 0.039
3.937 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
12.00 + 1.00 /–0.10
1.75 ± 0.10
5.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
0.157 ± 0.004
2.00 ± 0.10
17.60 ± 1.00
(inch)
0.069 ± 0.004
0.217 ± 0.004
0.315 ± 0.004
0.079 ± 0.004 0.472 + 0.039 /–0.004
0.693 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 4
QW-JTR15
Comchip Technology CO., LTD.
MOSFET
Marking Code
1
8
Marking Code
S8810
Part Number
CJS8810-HF
S8810
YY
Solid dot “ ” = Halogen Free
YY = Date Code
Suggested PAD Layout
TSSOP8
SIZE
(mm)
0.32
1.60
(inch)
0.013
0.063
G
F
A
B
C
B
A
0.65
5.60
0.026
0.220
E
D
E
F
C
1.95
4.00
7.20
0.077
0.157
0.283
D
G
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
TSSOP8
13
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
Page 5
QW-JTR15
Comchip Technology CO., LTD.
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