CMSBN4616-HF [COMCHIP]
Power Field-Effect Transistor,;
| 型号： | CMSBN4616-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSP Enhancement Mode Power MOSFET
CMSBN4616-HF
Dual N-Channel
RoHS Device
Halogen Free
CSPB1515-4
Features
Top
Back
- It is ESD protected.
0.026(0.65)
0.062(1.58)
0.058(1.48)
4
3
- This device is suitable for use as a
unidirectional or bi-directional load
S1
S2
G2
G1
G2
switch, facilitated by its common-drain
configuration.
∅0.011(0.29)
∅0.011(0.27)
0.062(1.58)
0.058(1.48)
0.026(0.65)
S2
S1
1
G1
2
∅0.013(0.33)
∅0.012(0.31)
∅0.011(0.29)
∅0.011(0.27)
Mechanical data
- Case: CSPB1515-4, standard package,
0.010(0.25)
0.007(0.19)
Passivation
Metal
molded plastic.
Dimensions in inches and (millimeter)
Circuit diagram
- G : Gate
- S : Source
G2
G1
S1
S2
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Source to source voltage
Gate-source voltage
Symbol
Value
Unit
VSSS
VGSS
IS
15
V
V
±12
Source current DC (Note 1)
Source current pulse (Note 1, 2)
Total dissipation (Note 1)
Channel temperature
8
60
A
ISP
A
PT
1.5
W
Tch
150
°C
Storage temperature range
TSTG
-55 to +150
Notes: 1. Mounted on FR4 board (25.4mm x 25.4mm x t1.0mm) using the minimum recommended pad size (36µm copper).
2. t = 10µs, duty cycle ≤ 1 %
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
SP-JTR47
Comchip Technology CO., LTD.
CSP Enhancement Mode Power MOSFET
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Conditions
Min
Max
Unit
Static parameters
Source to source breakdown voltage
Zero-gate voltage source current
Gate to source leakage current
Cutoff voltage
IS = 250µA, VGS = 0V,
VSS = 15V, VGS = 0V
VSS = 0V, VGS = ±8V
BVSSS
ISSS
15
V
µA
µA
1
IGSS
±10
1.3
VGS(off)
|ygFS|
VSS = 7.5V, IS = 250µA
VSS = 10V, IS = 3A
0.5
1
0.9
9
V
S
Forward transfer admittance
VGS = 4.5V, IS = 3A
VGS = 4.0V, IS = 3A
10
14
18
19
10.5
14.5
RSS(on)
td(on)
Static source to source on-resistance
Turn-on delay time
mΩ
VGS = 3.8V, IS = 3A
VGS = 3.1V, IS = 3A
11
12
15
16
20
21
VGS = 2.5V, IS = 3A
13
19
1.1
6.2
14
30
Turn-on rise time
tr
VSS = 12V, IS = 3A, VGS = 4.5V
µS
Turn-off delay time
td(off)
Turn-off fall time
tf
12
Qg
VSS = 12V, IS = 6A, VGS = 4.5V
VGS = 0V, IS = 1A
Total gate charge
Diode forward voltage
8.8
nC
V
VF(S-S)
1.2
Rating and Characteristic Curves (CMSBN4616-HF)
Fig.1 - Output Characteristics
Fig.2 - IS ― VGS
8
12
10
8
Pulsed
VSS=6V
Pulsed
7
VGS=4.5V
6
VGS=4.0V
5
VGS=3.8V
4
6
Ta=100°C
VGS=3.1V
3
4
VGS=2.5V
Ta=25°C
2
2
1
0
0
0
0.05
0.1
0.15
0.2
0.25
0
0.5
1.0
1.5
2.0
2.5
Source to Source Voltage, VSS (V)
Gate to Source Voltage, VGS (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
SP-JTR47
Comchip Technology CO., LTD.
CSP Enhancement Mode Power MOSFET
Rating and Characteristic Curves (CMSBN4616HF)
Fig.3 - RSS(ON) ― IS
Fig.4 - RSS(ON) ― VGS
100
90
80
70
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
Ta=25°C
Pulsed
Pulsed
IS=3A
VGS=2.5V
VGS=3.8V
Ta=100°C
VGS=4.5V
Ta=25°C
0
1
0
0
2
3
4
5
6
7
8
0
1
2
3
4
5
Source Current, IS (A)
Gate to Source Voltage, VGS (V)
Fig.5 - IS ― VSS
Fig.6 - Threshold Voltage
100
10
950
900
850
800
750
700
650
600
550
Ta=25°C
Pulsed
IS=250µA
Ta=100°C
1
Ta=25°C
0.1
1E-2
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
Source to Source Voltage, VSS (V)
Junction Temperature, TJ (°C)
Fig.7 - Total Power Dissipation vs.
Ambient Temperature
Fig.8 - Maximum Safe Operating Area
3
2.5
2
100
7
5
3
2
10
7
5
3
Mounted on FR-4 board of 1 inch², 2 oz
2
1.5
1
1
7
5
3
2
0.1
7
5
0.5
0
VGS=4.5V
Ta=25°C
3
2
Single pulse
0.01
25
50
75 100 125 150 175
0.01 2 3 5 70.1 2 3 5 7 1 2 3 5 710
2
Ambient Temperature, Ta (°C)
Source to Source Voltage, VSS (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
SP-JTR47
Comchip Technology CO., LTD.
CSP Enhancement Mode Power MOSFET
Rating and Characteristic Curves (CMSBN4616-HF)
Fig.9 - RSS(ON) ― Ta
50
45
40
35
VGS=3.8V, IS=3A
30
25
20
15
VGS=4.0V, IS=3A
10
5
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
SP-JTR47
Comchip Technology CO., LTD.
CSP Enhancement Mode Power MOSFET
Reel Taping Specification
T
P0
P1
E
F
W
B
C
P
A
1
2
0
o
D2
D1
D
W1
Trailer
.......
Device
.......
Leader
.......
.......
.......
.......
Start
End
.......
.......
160mm (min)
400mm (min)
Direction of Feed
SYMBOL
A
B
C
d
D
D1
D2
1.50 + 0.10
(mm)
1.65 ± 0.05
1.65 ± 0.05
0.50 ± 0.05
180.00 Typ
60.00 Typ
13.00 Typ
CSPB1515-4
CSPB1515-4
− 0.00
0.059 + 0.004
− 0.000
(inch)
0.065 ± 0.002 0.065 ± 0.002 0.020 ± 0.002
7.087 Typ
2.362 Typ
0.512 Typ
SYMBOL
(mm)
E
F
P
P0
P1
T
W
8.00 + 0.30
− 0.10
W1
1.75 ± 0.10
3.50 ± 0.05
4.00 Typ
4.00 Typ
2.00 ± 0.05
0.20 ± 0.02
11.40 Typ
0.315 + 0.012
− 0.004
(inch)
0.069 ± 0.004 0.138 ± 0.002
0.157 Typ
0.157 Typ
0.079 ± 0.002 0.008 ± 0.001
0.449 Typ
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
SP-JTR47
Comchip Technology CO., LTD.
CSP Enhancement Mode Power MOSFET
Marking Code
S2
G2
Marking Code
4616
Part Number
4616
CMSBN4616-HF
XXXX
S1
G1
XXXX = Control code
Suggested PAD Layout
B
CSPB1515-4
SIZE
(mm)
0.65
0.65
0.30
(inch)
0.026
0.026
0.012
A
A
B
C
Note: 1. The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
CSPB1515-4
3000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 6
SP-JTR47
Comchip Technology CO., LTD.
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