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CPD1E12V-G [COMCHIP]

Transient Suppressor,;
CPD1E12V-G
型号： CPD1E12V-G
厂家： COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述：

Transient Suppressor,
文件： 总2页 (文件大小：102K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Bidirectional ESD / Transient Suppressor  
CPD Series (RoHS Device)  
Features  
ꢀ (16kV) IEC 61000-4-2 rating  
ꢀ Surface mount package  
ꢀ High component density  
-VBD  
0V  
+VBD  
Applications  
ꢀ ESD suppression  
ꢀ Transient suppression  
ꢀ Automotive CAN Bus  
Package  
Circuit Schematic  
W
d
1E, U  
W
P
L
L
p
d
Dimensions in ( mm ):  
Package  
Code  
1E  
Package  
Power  
Number  
of Pins  
2
L + 0.2  
W + 0.2  
p + 0.1  
P + 0.1  
Pkg. Height  
+ 0.2  
d + 0.1  
100mw  
1.1 (.05)  
0.75 (.030) .38 (.015)  
0.8 (.031) 0.4 (.016)  
0.33 (.013)  
0.5 (.020)  
.75 (.030)  
.35 (.014)  
U
100mw  
2
1.6 (.063)  
0.75 (.030) 0.6 (.024)  
Application Schematic  
Vp (Transient)  
Gnd.  
Connector  
Transceiver  
V clamp  
0 v  
Bidirectional ESD Suppressor  
Specifications:( Ta = 25oC )  
36V Characteristic PRELIMINARY  
Symbol  
VBD  
IL  
Characteristic  
Diode breakdown voltage  
Leakage current  
Min  
38  
Typ  
40  
0.1  
5
Max  
2.0  
Units  
V
uA  
pF  
V
kV  
A
Test Condition  
IF = 1 ma  
36v  
CT  
Capacitance  
@ 1Mhz  
VESD  
VPV  
Ipp *  
Channel clamp voltage  
Peak ESD voltage capability  
Peak Pulse Current  
-
+ 40  
16  
15  
8kV event  
IEC 61000-4-2  
8 / 20 us  
24V Characteristic (CAN bus)  
Symbol  
VBD  
IL  
Characteristic  
Min  
25  
Typ  
28  
0.1  
10  
-
Max  
2.0  
Units  
V
uA  
pF  
V
kV  
A
Test Condition  
IF = 1 ma  
Diode breakdown voltage  
Leakage current  
24v  
CT  
Capacitance  
@ 1Mhz  
VESD  
VPV  
Ipp *  
Channel clamp voltage  
Peak ESD voltage capability  
Peak Pulse Current  
+ 25  
16  
15  
8kV event  
IEC 61000-4-2  
8 / 20 us  
12V Characteristic PRELIMINARY  
Symbol  
VBD  
IL  
Characteristic  
Diode breakdown voltage  
Leakage current  
Min  
14  
Typ  
17  
0.1  
12  
-
Max  
2.0  
Units  
V
uA  
pF  
V
kV  
A
Test Condition  
IF = 1 ma  
12v  
CT  
Capacitance  
@ 1Mhz  
VESD  
VPV  
Ipp *  
Channel clamp voltage  
Peak ESD voltage capability  
Peak Pulse Current  
+ 17  
16  
15  
8kV event  
IEC 61000-4-2  
8 / 20 us  
5V0 Characteristic  
Symbol  
Characteristic  
Min  
5.1  
Typ  
7.0  
+0.1  
15  
Max  
Units  
V
uA  
pF  
V
kV  
A
Test Condition  
IF = 1 ma  
5v  
VBD  
IL  
CT  
Diode breakdown voltage  
Leakage current  
Capacitance  
+ 2.0  
20  
+ 7.0  
16  
5.1  
@ 1Mhz  
VESD  
VPV  
Ipp *  
Channel clamp voltage  
Peak ESD voltage capability  
Peak Pulse Current  
-
8kV event  
IEC 61000-4-2  
8 / 20 us  
* one diode conducting  
Ordering Information:  
CPD  
Type  
CPD  
1E / U  
36V  
Voltage  
5V0  
Package Code  
Code from  
Dimensions Table  
12V  
24V  
36V  

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