CPDT-5V0USP-HF [COMCHIP]
TVS DIODE 5VWM 19VC SOT23;
| 型号： | CPDT-5V0USP-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | TVS DIODE 5VWM 19VC SOT23 局域网 光电二极管 电视 |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Capacitance SMD ESD Protection Diode
CPDT-5V0USP-HF
RoHS Device
Halogen Free
Features
- IEC61000-4-2 Level 4 ESD protection
SOT-23
- Surface mount package.
0.118(3.00)
0.110(2.80)
- High component density.
3
0.055(1.40)
0.047(1.20)
Mechanical data
1
2
- Case: SOT-23 Standard package, molded
0.079(2.00)
0.071(1.80)
plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.006(0.15)
0.003(0.08)
0.045(1.15)
0.035(0.90)
- Mounting position: Any.
0.100(2.55)
0.089(2.25)
- Weight: 0.0078 grams(approx.).
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
Circuit diagram
0.020(0.50)
0.012(0.30)
3
Dimensions in inches and (millimeter)
1
2
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
PPP
Parameter
Conditions
Value
Unit
W
Peak pulse power
TP = 8/20us
76
Peak pulse current
ESD capability
TP = 8/20us
IPP
4
A
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
±15
±8
kV
ESD
Operation temperature range
Storage temperature range
Tj
-55~+150
-55~+150
°C
°C
TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Parameter
Working peak reverse voltage
Breakdown voltage
Conditions
Min
Max
Unit
V
VRWM
VBR
IR
5
IT = 1mA
6
V
Reverse leakage current
Forward voltage
VRWM = 5V
IF = 10mA
0.5
1.2
uA
V
VF
IPP = 1A, TP = 8/20us
IPP = 4A, TP = 8/20us
12
19
Clamping voltage
VC
V
VR = 0V, f = 1MHz (I/O pin to I/O pin)
VR = 0V, f = 1MHz (I/O pin to GND pin)
pF
pF
CJ
CJ
0.3
0.6
0.45
0.9
Junction capacitance
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JP049
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDT-5V0USP-HF)
Fig.1 - 8/20us Peak Pulse Current
Wave Form Acc. IEC 61000-4-5
Fig.2 - Power Rating Derating Curve
120%
100%
80%
60%
40%
20%
0%
120
100
Test Waveform
parameters
Mounting on glass epoxy PCBs
tf=8us
Ta=25°C
Peak Valur Ipp
td=20us
-t
80
e
60
40
20
0
td= t
Ipp/2
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Ambient Temperature, ( °C )
Time, (us)
Fig.4 - Clamping Voltage Vs.
Peak Pulse Current
Fig.3 - Forward Characteristic
20
16
10
8/20us waveform
150°C
125°C
12
8
75°C
100°C
1
50°C
25°C
4
0
0
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
Peak Pulse Current, (A)
Forward Voltage, ( V )
Fig.5 - Capacitance Between
Terminals Characteristics
0.9
I/O Pin to GND
I/O Pin to I/O Pin
0.6
0.3
0.0
0
1
2
3
4
5
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-JP049
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Reel Taping Specification
P0
P1
XXX
1
2
0
o
D2
D
D1
W1
SYMBOL
(mm)
A
B
C
d
D
D1
D2
SOT-23
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.079
0.512 ± 0.039
2.142 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
SOT-23
8.00 + 0.30 / - 0.10
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 / - 0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-JP049
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Marking Code
3
Marking Code
E5UP
Part Number
E5UP
CPDT-5V0USP-HF
1
2
Suggested PAD Layout
E
SOT-23
SIZE
(mm)
(inch)
A
A
B
C
0.80
0.031
1.90
2.02
0.075
0.080
C D
D
E
2.82
0.80
0.111
0.031
B
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-23
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
QW-JP049
Comchip Technology CO., LTD.
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