CSFB204 [COMCHIP]
SMD Super Fast Recovery Rectifier; SMD超快速整流器
| 型号： | CSFB204 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Super Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Super Fast Recovery Rectifier
CCOOMMCCHHIIPP
www.comchip.com.tw
CSFB201 Thru CSFB205
Reverse Voltage: 50 - 600 Volts
Forward Current: 2.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
SMB/DO-214AA
Plastic package has Underwriters Lab.
flammability classification 94V-0
0.083(2.11)
0.155(3.94)
0.130(3.30)
Super fast recovery time 35-50 nS
Built-in strain relief
0.075(1.91)
Low forward voltage drop
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
Mechanical Data
0.096(2.44)
0.083(2.13)
Case: JEDEC DO-214AA molded plastic
0.008(0.20)
0.203(0.10)
0.050(1.27)
0.030(0.76)
Terminals: solderable per MIL-STD-750,
method 2026
0.220(5.59)
0.200(5.08)
Polarity: Color band denotes cathode
end
Dimensions in inches and (millimeter)
Mounting position: Any
Approx. Weight:0.093 gram
Maximum Ratings and Electrical Characterics
CSFB
201
CSFB
202
CSFB
203
CSFB
204
CSFB
205
Unit
Symbol
VRRM
VDC
Parameter
600
600
420
50
50
35
200
200
140
400
400
280
100
100
70
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
V
V
V
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
50
I o
2.0
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 2.0 A
0.95
1.3
1.5
V F
V
Trr
Reverse recovery time
35
50
nS
Max. DC ReverseCurrent at RatedDC
I R
5.0
Blocking Voltage
Ta=25 C
Ta=100C
uA
100
20
R
JL
Max. Thermal Resistance(Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas.
Page 1
MDS0210019B
SMD Super Fast Recovery Rectifier
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CSFB201 Thru CSFB205)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
100
1000
CSFB201-203
Tj=125 C
CSFB204
10
100
1.0
0.1
0.01
Tj=75 C
10
CSFB205
Tj=25 C
1.0
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
50
40
30
60
50
40
30
20
15
0
8.3mS Single HalfSine
Wave JEDEC methode
f=1.0MHz
Vsig=50mVp-p
Tj=25 C
20
10
0
Tj=25 C
0.1
1.0
10
100
1000
1
5
10
50
1 00
Reverse Voltage (V)
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
trr
50
W
10W
NONINDUCTIVE
2.4
2.0
1.6
1.2
NONINDUCTIVE
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|
|
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+0.5A
(
)
(+)
0
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
(approx.)
-0.25A
(
)
(+)
Single Phase
0.8
Half Wave 60Hz
1W
OSCILLISCOPE
(NOTE 1)
NON-
INDUCTIVE
0.4
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
0
0
25
50
75
100 125 150 175
1cm
Ambient Temperature ( C)
SET TIME BASE FOR
50 / 10ns / cm
Page 2
MDS0210019B
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