CZRB3030 [COMCHIP]

Surface Mount Zener Diode; 表面贴装稳压二极管
CZRB3030
型号: CZRB3030
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

Surface Mount Zener Diode
表面贴装稳压二极管

稳压二极管
文件: 总5页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount Zener Diode  
COOMMCCHHIIPP  
www.comchip.com.tw  
CZRB3011 Thru CZRB3100  
Voltage: 11 - 100 Volts  
Power: 3.0 Watt  
Features  
- For surf ace mounted applications in order to  
optimize board space  
- Low profile package  
- Built-in strain relief  
- Glass passivated junction  
- Low inductance  
SMB/DO-214AA  
0.083(2.11)  
0.155(3.94)  
0.130(3.30)  
0.075(1.91)  
- Excellent clamping capability  
0.185(4.70)  
0.160(4.06)  
- Typical ID less than 1uA above 11V  
0.012(0.31)  
0.006(0.15)  
- High temperature soldering 260°C /10  
seconds at terminals  
0.096(2.44)  
0.083(2.13)  
0.008(0.20)  
0.203(0.10)  
- Plastic package has underwriters laboratory  
flammability classification 94V-O  
0.050(1.27)  
0.030(0.76)  
0.220(5.59)  
0.200(5.08)  
Mechanical data  
- Case: JEDEC DO-214AA, Molded plastic  
over passivated junction  
Dimensions in inches and (maillimeter)  
- Terminals: Solder plated, solderable per MIL-  
STD-750, method 2026  
- Polarity: Color band denotes positive end  
(cathode) except Bidirectional  
- Standard Packaging: 12mm tape (EIA-481)  
- Weight: 0.002 ounce, 0.064 gram  
Maximum Ratings and Electrical Characterics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Rating  
Peak Pulse Power Dissipation (Note A)  
Derate above 75  
Symbol  
Value  
3
24  
Units  
Watts  
mW/°C  
PD  
Peak forward Surge Current 8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) (Note B)  
Operating Junction and Storage Temperature Range  
IFSM  
15  
Amps  
°C  
TJ,TSTG  
-55 to +150  
Page 1  
MDS0303002A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
ELECTRICAL CHARACTERISTICS  
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)  
Nominal  
Maximum Zener Impedance  
Surge  
Current  
Zener  
Test  
current  
IZT  
Leakage Current Maximum  
Zener  
(Note 3.)  
Voltage VZ  
Device  
@TA=25°C  
(Note 4.)  
Current IZM  
(Note 1.)  
@ IZT  
(Note 2.)  
(Volts)  
11  
Z
ZT @ IZT ZZK @ IZK  
IR  
IZK  
V
R  
(mA)  
68  
63  
58  
53  
50  
47  
44  
42  
40  
37  
34  
31  
28  
27  
25  
23  
21  
19  
17  
16  
15  
13  
12  
11  
10  
9.1  
8.2  
7.5  
(Ohms)  
(Ohms)  
700  
(mA)  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
(uA)  
1
(Volts)  
8.4  
Madc  
225  
246  
208  
193  
180  
169  
150  
159  
142  
135  
123  
112  
100  
96  
Ir - mA  
1.82  
1.66  
1.54  
1.43  
1.33  
1.25  
1.18  
1.11  
1.05  
1.00  
0.91  
0.83  
0.74  
0.71  
0.67  
0.61  
0.56  
0.51  
0.45  
0.42  
0.39  
0.36  
0.32  
0.29  
0.27  
0.24  
0.22  
0.20  
CZRB3011  
CZRB3012  
CZRB3013  
CZRB3014  
CZRB3015  
CZRB3016  
CZRB3017  
CZRB3018  
CZRB3019  
CZRB3020  
CZRB3022  
CZRB3024  
CZRB3027  
CZRB3028  
CZRB3030  
CZRB3033  
CZRB3036  
CZRB3039  
CZRB3043  
CZRB3047  
CZRB3051  
CZRB3056  
CZRB3062  
CZRB3068  
CZRB3075  
CZRB3082  
CZRB3091  
CZRB3100  
4
4.5  
4.5  
5
12  
700  
1
9.1  
9.9  
13  
700  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
14  
700  
10.6  
11.4  
12.2  
13  
13.7  
14.4  
15.2  
16.7  
18.2  
20.6  
21  
15  
5.5  
5.5  
6
700  
16  
700  
17  
750  
18  
6
750  
19  
7
750  
20  
7
750  
22  
8
750  
24  
9
750  
27  
10  
12  
16  
20  
22  
28  
33  
38  
45  
50  
55  
70  
85  
95  
115  
160  
750  
28  
750  
30  
1000  
1000  
1000  
1000  
1500  
1500  
1500  
2000  
2000  
2000  
2000  
3000  
3000  
3000  
22.5  
25.1  
27.4  
29.7  
32.7  
35.6  
38.8  
42.6  
47.1  
51.7  
56  
90  
33  
82  
36  
75  
39  
69  
43  
63  
47  
57  
51  
53  
56  
48  
62  
44  
68  
40  
75  
36  
82  
62.2  
69.2  
76  
33  
91  
30  
100  
27  
NOTE:  
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.  
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms  
from the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).  
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having  
an rms falue equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.  
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge  
current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards,  
however, actual device capability is as described in Figure 3.  
Page 2  
MDS0303002A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)  
30  
20  
D = 0.5  
0.2  
10  
7
5
0.1  
3
2
0.05  
0.02  
NOTE BELOW 0.1 SECOND,  
THERMAL RESPONSE  
CURVE IS APPLICABLE TO  
ANY LEAD LENGTH (L)  
1
0.7  
0.5  
SINGLE PULSE  
TJL = JL(t)PPK  
REPETITIVE PULSES TJL =  
JL(t,D)PPK  
0.01  
D = 0  
0.3  
0.0001 0.0002 0.0005 0.001 0.002  
0.005 0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
Fig. 2-TYPICAL THERMAL RESPONSE L,  
1K  
500  
300  
200  
RECTANGULAR NONREPETITIVE  
WAVEFORM TJ = 25°C PRIOR TO  
INITIAL PULSE  
0.1  
0.05  
0.03  
0.02  
100  
50  
0.01  
0.005  
0.003  
0.002  
30  
20  
0.001  
0.0005  
0.0003  
0.0002  
0.0001  
10  
.1  
.2 .3  
5
1
2
3
5
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
200  
500  
1K  
P.W. PULSE WIDTH (ms)  
NOMINAL VZ (VOLTS)  
Fig. 3-MAXIMUM SURGE POWER  
Fig. 4-TYPICAL REVERSE LEAKAGE  
8
6
200  
100  
4
2
RANGE  
50  
40  
30  
RANGE  
0
-2  
-4  
20  
3
4
6
8
10  
12  
10  
0
20  
40  
60  
80 100  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
Fig. 5 - UNITS TO 12 VOLTS  
Fig. 6 - UNITS 10 TO 100 VOLTS  
Page 3  
MDS0303002A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)  
100  
100  
50  
30  
20  
10  
50  
30  
20  
10  
5
3
2
5
3
2
1
1
0.5  
0.3  
0.2  
0.5  
0.3  
0.2  
0.1  
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
10 20 30 40 50 60 70 80 90 100  
VZ, ZENER VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
80  
70  
60  
50  
40  
30  
20  
10  
0
PRIMARY PATH OF  
CONDUCTION IS THROUGH  
THE CATHODE LEAD  
0
1/8  
1/4  
3/8  
1/2  
5/8  
3/4  
7/8  
1
L, LEAD LENGTH TO HEAT SINK (INCH)  
TYPICAL THERMAL RESISTANCE  
Page 4  
MDS0303002A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
¨TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
¨TJL = șLAPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ (¨TJL ) may be estimated.  
Changes in voltage, Vz, can then be found from:  
¨V = șVZ ¨TJ  
APPLICATION NOTE:  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
Lead Temperature, TL, should be determined from:  
TL = șLAPD + TA  
șLA is the lead-to-ambient thermal resistance (°C/W)  
and PD is the power dissipation. The value for șLA will  
vary and depends on the device mounting method.  
șLA is generally 30-40 °C/W for the various chips and  
tie points in common use and for printed circuit board  
wiring.  
șVZ , the zener voltage temperature coefficient, is  
found from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
excursions as low as possible.  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure 3 be  
exceeded.  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible to  
the tie point. The thermal mass connected to the tie point  
is normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result  
of pulsed operation once steady-state conditions are  
achieved. Using the measured value of TL, the junction  
temperature may be determined by:  
TJ = TL + ¨TJL  
MDS0303002A  
Page 5  

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