概述
数据手册GBU808-G 概述
SMD Glass Passivated Bridge Rectifiers 贴片玻璃钝化整流桥
GBU808-G 数据手册
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PDF下载SMD Glass Passivated Bridge Rectifiers
GBU8005-G Thru. GBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
GBU
-Rating to 1000V PRV
0.437(11.1)
0.430(10.9)
-Surge overload rating - 200 amperes peak.
-Ideal for printed circuit board
0.139(3.53)
0.133(3.37)
0.874(22.2)
0.860(21.8)
0.126(3.2)*45°
Chamfer
0.161(4.1)
0.134(3.4)
-Reliable low cost construction utilizing
molded plastic technique
0.232(5.90)
0.213(5.40)
0.752(19.1)
0.720(18.3)
0.401(10.2)
0.073(1.85)
0.057(1.45)
0.392(9.80)
-Plastic material has underwriters laboratory
flammability classification 94V-0
0.100(2.54)
0.085(2.16)
0.720(18.29)
0.680(17.27)
0.047(1.2)
0.035(0.9)
0.106(2.7)
0.091(2.3)
0.080(2.03)
0.065(1.65)
Mechanical Data
0.022(0.56)
0.018(0.46)
0.210(5.3)
0.190(4.8)
-Polarit:As marked on Body
0.210(5.3)
0.190(4.8)
-Mounting position:Any
0.210(5.3)
0.190(4.8)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
GBU
8005-G
GBU
801-G
GBU
802-G
GBU
804-G
GBU
806-G
GBU
808-G
GBU
810-G
Symbol
Parameter
Unit
Maximum Reverse Peak Repetitive Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
V
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V
DC
100
1000
8.0
3.2
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
I
(AV)
A
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
IFSM
200
Maximum Forward Voltage Drop
Per Bridge Element at 4.0A Peak
1.1
VF
V
@TJ=25°C
@TJ=125°C
Maximum Reverse Current
At Rate DC Blocking Voltage
10.0
500
μA
IR
I2 T Rating for Fusing(t<8.3ms)
I2t
166
60
°C/W
pF
Typical Junction Capacitandce Per Element
(Note 1)
C
J
Typical Thermal Resistance
RθJA
2.2
°C/W
°C
Operating Temperature Range
-55 to +150
-55 to +150
TJ
Storage Temperature Range
Notes:
TSTG
°C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
REV:A
Page 1
QW-BBR54
Comchip Technology CO., LTD.
SMD Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (GBU8005-G Thru. GBU810-G)
Fig.1 - Forward Current Derating Curve
Fig.2 - Maximum NON-Repetitive
Surge Current
10.0
8.0
TJ=125 OC
WITH HEAT SINK
200
150
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
6.0
100
50
0
WITHOUT HEAT SINK
4.0
2.0
0.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOADS
1
10
100
0
50
100
150
Case Temperature, (°C)
Number Of Cycle At 60Hz
Fig.3 - Typical Junction Capacitance
Fig.4 - Typical Forward Characteristics
1000
100
50
10.0
1.0
0.1
TJ=25°C
Pulse width: 300us
TJ=25°C,f=1MHz
0.01
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
Reverse Voltage, (V)
Instantaneous Forward Voltage, (V)
Fig.5 - Typical Reverse Characteristics
1000
100
10
TJ=125°C
TJ=100°
C
TJ=50°C
TJ=25°C
1.0
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage, (%)
REV: A
Page 2
QW-BBR54
Comchip Technology CO., LTD.
SMD Glass Passivated Bridge Rectifiers
Marking Code
C
Marking code
Part Number
GBU8005-G
GBU801-G
GBU802-G
GBU804-G
GBU806-G
GBU808-G
GBU810-G
GBU8005
GBU801
GBU802
GBU804
GBU806
GBU808
GBU810
GBU
XXX
AC
-
+
XXX / XXXX = Product type marking code
C = Compchip Logo
Standard Packaging
TUBE PACK
Case Type
TUBE
BOX
( pcs )
( pcs )
20
GBU
1,000
REV: A
Page 3
QW-BBR54
Comchip Technology CO., LTD.
GBU808-G 相关器件
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| GBU81 | SECOS | Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers | 获取价格 |
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| GBU810 | DIODES | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER | 获取价格 |
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| GBU810 | HY | GLASS PASSIVATED BRIDGE RECTIFIERS | 获取价格 |
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| GBU810 | YANGJIE | SINGLE PHASE 4.0/6.0/8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS | 获取价格 |
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| GBU810 | SECOS | 8 .0 AMP Glass Passivated Bridge Rectifiers | 获取价格 |
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