HD04-G [COMCHIP]

Rectifier Diode,;
HD04-G
型号: HD04-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

Rectifier Diode,

光电二极管
文件: 总2页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount Bridge Rectifier  
HD01-G THRU HD10-G (RoHS Device)  
Voltage Range 100 to 1000 V  
Current 0.8 Ampere  
Features  
MINI-DIP  
Plastic package has Underwriters  
Laboratory Flammability Classification  
94V-0  
C.02(.5)  
High surge current capability  
Saves space on printed circuit boards  
Glass passivated structure  
Mechanical Data  
Case: Molded plastic body over passivated  
junctions  
Terminals: Solderable per MIL-STD-750,  
method 2026  
Polarity: As marked on body  
Mounting position: Any  
Weight: 0.22 gram  
-
+
~
.275(7)  
MAX  
.043(1.1)  
.027(0.7)  
.165(4.2)  
.150(3.8)  
~
.014(.35)  
.006(.15)  
.051(1.3)  
.031(0.8)  
.019(0.5)  
.067(1.7)  
.057(1.3)  
.106(2.7)  
.090(2.3)  
.193(4.9)  
.177(4.5)  
.035(0.9)  
.106(2.7)  
.090(2.3)  
.118(3.0)  
MAX  
.008(0.2)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
CHARACTERISTIC  
SYMBOL HD01-G HD02-G HD04-G HD06-G HD08-G HD10-G  
UNIT  
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified  
Current TA=40oC  
0.8  
30  
A
A
V
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
Maximum Instantaneous Forward Voltage  
@ 0.8 A  
VF  
IR  
1.0  
Maximum DC Reverse Current @TJ=25oC  
uA  
uA  
5.0  
250  
At Rated DC Blocking Voltage @TJ=125oC  
A2  
S
Rating for fusing (t < 8.3ms)  
I2t  
5
CJ  
pF  
oC/W  
Typical junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
25  
85  
R JA  
Operating Junctionand Storage  
Temperature Range  
TJ, TSTG  
-55 to + 150  
oC  
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(2) Thermal Resistance form junction to ambient mounted on P.C.B with 0.5 x 0.5"(13x13mm) copper pads.  
1 / 2  
Surface Mount Bridge Rectifier  
HD01-G THRU HD10-G  
RATINGS AND CHARACTERISTIC CURVES B1S-G THRU B10S-G  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
0.8  
30  
25  
20  
15  
10  
5
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
0.6  
0.4  
0.2  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
AMBIEND TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
10  
1.0  
100  
TJ=125oC  
10  
1
TJ=25oC  
0.1  
0.1  
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
100  
10  
1
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
2 / 2  

相关型号:

HD04-T

0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DIODES

HD04-T

Evaluation Board Rev 5.0 for the Si2493/57/34/15/04
SILICON

HD04002000J0G

Barrier Strip Terminal Block
AMPHENOL

HD04004000J0G

Barrier Strip Terminal Block
AMPHENOL

HD04006000J0G

Barrier Strip Terminal Block
AMPHENOL

HD04009000J0G

Barrier Strip Terminal Block
AMPHENOL

HD05-T

0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DIODES

HD05002000J0G

Barrier Strip Terminal Block
AMPHENOL

HD05003000J0G

Barrier Strip Terminal Block
AMPHENOL

HD0500C000J0G

Barrier Strip Terminal Block
AMPHENOL

HD0512P36SR

双路稳压隔离输出,小体积、高功率密度、高转换效率,环保设计,符合RoHS标准,广泛应用于工业电气、机械设备、通讯、数据通信、手持电子产品、仪器仪表、智能化、工业自动化设备等。
RCD

HD0515P36SR

双路稳压隔离输出,小体积、高功率密度、高转换效率,环保设计,符合RoHS标准,广泛应用于工业电气、机械设备、通讯、数据通信、手持电子产品、仪器仪表、智能化、工业自动化设备等。
RCD