MP1001-G [COMCHIP]
Silicon Bridge Rectifiers; 硅桥式整流器
| 型号： | MP1001-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Bridge Rectifiers |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Bridge Rectifiers
MP1000-G THRU MP1010-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 10 Amp
Features:
Diffused Junction
High Current Capability
MP-10
High Case Dielectric Strength
High Surge Current Capability
Ideal for Printed Circuit Board Application
Plastic Material has Underwriters
Laboratory Flammability Classification 94V-0
H
J
G
KBP
Min.
14.73
5.80
19.00
1.00 O Typical
+
~
-
Dim
Max
15.75
6.90
-
A
B
C
D
E
A
E
~
5.11
6.14
E
Hole for #6 screw
G
Mechanical Data:
3.60
10.30
2.38x45ºC Typical
4.00
11.30
J
I
Case: Molded Plastic
D
C
B
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
All Dimensions in mm
Weight: 5.4 grams (approx.)
Mounting position: Through Hole for #6
Screw
Metal Heat Sink
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
MP
MP
MP
MP
KBP
KBP
KBP
Symbol
Characteristics
UNIT
V
1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
R
V
A
RMS Reverse Voltage
280
10
V
R(RMS)
Average Rectified Output Current (Note1) @ T = 50ºC
I
o
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half-sine-wave superimposed on rated load (JEDEC
Method)
I
FSM
200
1.1
A
V
V
FM
RM
2
Forward Voltage (per element) @ I =2.0A
F
10
1.0
Peak Reverse Current @ T =25ºC
uA
A
I
At Rated DC Blocking Voltage @ T =100ºC
A
2
A S
Rating for Fusing (t<8.3ms) (Note2)
Typical Thermal Resistance (Note4)
Operating and Storage Temperature Range
Typical Junction Capacitance (Note3)
I t
64
7.5
K/W
ºC
R
θJA
TJ, TSTG
CJ
-55 to +160
110
pF
Note:
1. Non-repetitive for t>1ms and <8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03 mm thick land areas.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to case per element.
“-G” suffix designated RoHS compliant version
.
.
.
Page1
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
Silicon Bridge Rectifiers
MP1000-G THRU MP1010-G (RoHS Device)
Rating and Characteristic Curve (MP1000-G thru MP1010-G)
10
10
8
Resistive oorr
Inductive llooaadd
1.0
6
4
0.1
Tj = 25 o
Pulse wwiidth == 3300uS
C
2
0
0.01
255
550
75
100
125
0
0.4
0.8
1.22
1..66
T
A
, Ambient Temperature (oC)
VF, Instantaneous Forward Voltage (V)
240
200
160
10
Tc = 50oC
Single hhaallff ssiinnee--wwaavvee
Tj =10000o
C
JEDEC mmeetthhoodd
1.0
120
80
0.1
40
0
Tj =25oC
0.01
1.0
10
100
00
4400
880
120
Number of Cycles at 60Hz
Percent of Rated Peak Reverse Voltage (%)
“-G” suffix designated RoHS compliant version
.
.
.
Page2
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com
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