RB521S-30 [COMCHIP]
SMD Schottky Barrier Diode; SMD肖特基势垒二极管
| 型号： | RB521S-30 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Diode
Comchip
S M D D i o d e S p e c i a l i s t
RB521S-30
Io = 200 mA
VR = 30 Volts
RoHS Device
Features
SOD-523
- Low reverse current.
- Low forward voltage.
0.008(0.20)
REF
0.051(1.30)
0.043(1.10)
- Designed for mounting on small surface.
- Extremely thin package.
- Majority carrier conduction.
0.014(0.35)
0.010(0.25)
0.033(0.85)
0.030(0.75)
0.067(1.70)
0.059(1.50)
Mechanical data
- Case: SOD-523 standard package,
0.006(0.15)
0.003(0.08)
Molded plastic.
0.031(0.77)
0.020(0.51)
- Terminals: solderable per
MIL-STD-750,method 2026.
0.003(0.07)
0.001(0.01)
- Marking code: cathode band & C
- Mounting position: Any
Dimensions in inches and (millimeter)
- Weight: 0.0012 gram(approx.).
Circuit Diagram
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Typ
Max Unit
Parameter
Conditions
Min
V
DCReverse voltage
30
VR
IO
mA
Mean rectkfying current
200
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Peak forward surge current
IFSM
1
A
O
Storage temperature
Junction temperature
TSTG
Tj
+150
+150
C
O
-55
C
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Typ
Max Unit
Parameter
Conditions
Min
Forward voltage
IF = 200 mA
VR = 10 V
VF
0.5
V
Reverse current
IR
30
µA
REV:A
Page 1
QW-BB044
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (RB521S-30)
Fig.1- Forward Characteristics
Comchip
S M D D i o d e S p e c i a l i s t
Fig. 2 - Reverse characteristics
1000
1000
100
TA=100OC
100
10
10
1
TA=25OC
1
0.1
0.01
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
Forward Voltage, (mV)
Reverse voltage, (V)
Fig. 3 - Capacitance characteristics
Fig.4 - Power Derating curve
100
TA=25°C
f = 1 MHz
100
80
60
40
20
0
10
1
0
5
10
15
20
0
25
50
75
100 125 150
Reverse Voltage, (V)
Ambient Temperature, (°C)
REV:A
Page 2
QW-BB044
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Comchip
S M D D i o d e S p e c i a l i s t
Reel Taping Specification
T
d
P0
P1
E
F
Index hole
W
B
Polarity
P
A
C
1
2
0
o
D2
D
D1
W1
Trailer
Device
Leader
.......
.......
....... .......
....... .......
.......
..... ..
Start
End
10 pitches (min)
10 pitches (min)
Direction of Feed
SYMBOL
(mm)
A
B
C
d
D
D1
D2
SOD-523
SOD-523
0.90 ± 0.10
1.94 ± 0.10
0.73 ± 0.10
1.50 + 0.10
178 ± 1.00
54.40 ± 0.40
13.00 ± 0.20
(inch)
0.035 ± 0.004
0.076 ± 0.004
0.029 ± 0.004
0.059 + 0.004
7.008 ± 0.039
0.512 ± 0.008
2.142 ± 0.016
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
8.00 + 0.30 /–0.10
1.75 ± 0.10
3.50 ± 0.05
2.00 ± 0.10
4.00 ± 0.10
0.158 ± 0.004
2.00 ± 0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.079 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004
0.374 ± 0.039
REV:A
Page 3
QW-BB044
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Comchip
S M D D i o d e S p e c i a l i s t
Marking Code
Marking Code
Part Number
C
RB521S-30
C
Suggested PAD Layout
SOD-523
SIZE
(mm)
(inch)
D
A
E
A
B
C
1.40
0.055
0.60
0.70
0.024
0.028
C
D
E
2.00
0.80
0.079
0.031
B
Standard Packaging
Qty Per Reel
(Pcs)
Reel Size
(inch)
Case Type
SOD-523
3,000
7
REV:A
Page 4
QW-BB044
Comchip Technology CO., LTD.
相关型号：
RB521S-30-T1-LF
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
RB521S-30-TP
Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
RB521S-30LP-TP
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明