SB545EA-G [COMCHIP]

ESD Leaded Schottky Barrier Rectifiers; ESD引线肖特基势垒整流器
SB545EA-G
型号: SB545EA-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

ESD Leaded Schottky Barrier Rectifiers
ESD引线肖特基势垒整流器

文件: 总3页 (文件大小:58K)
中文:  中文翻译
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ESD Leaded Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SB520E-G Thru. SB5100E-G  
Voltage: 20 to 100 V  
Current: 5.0 A  
RoHS Device  
DO-201AD  
Features  
-Low drop down voltage.  
-5.0A operation at TA=75°C with no thermal runaway.  
-For use in low voltage, high frequency invertors free  
wheeling and polarity protection.  
1.0(25.4) Min.  
0.210(5.3)  
0.189(4.8)  
-Silicon epitaxial planar chips.  
-ESD test under IEC6100-4-2 :  
Standard: >15KV(Air) & 8KV(Contact)  
0.375(9.5)  
0.287(7.3)  
-Lead-free part, meet RoHS requirements.  
Mechanical data  
1.0(25.4) Min.  
0.052(1.3)  
0.048(1.2)  
-Epoxy: UL94-V0 rated flame retardant  
-Case: Molded plastic body DO-201AD  
-Terminals: Solderable per MIL-STD-750 Method 2026  
-Polarity: Color band denotes cathode end  
-Mounting Position: Any  
Dimensions in inches and (millimeter)  
-Weight: 1.12grams  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Symbol  
Parameter  
Unit  
520E-G 540E-G 545E-G 550E-G 560E-G 580E-G 5100E-G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
45  
30  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.5” (12.7mm) lead length at TA=75°C, See Figure 1  
I(AV)  
A
5.0  
Peak forward surge current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC method) TL=110°C  
150  
125  
30  
IFSM  
VF  
IR  
A
V
Maximum forward voltage at 5.0A (Note 1)  
0.55  
0.70  
0.85  
0.5  
Maximum DC reverse current  
At rated DC blocking voltage  
T
A
=25°C  
mA  
T
A
=100°C  
50  
Typical junction capacitance (Note 2)  
Typical thermal resistance (Note 3)  
pF  
CJ  
500  
RθJA  
RθJL  
35.0  
15.0  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
-65 to +150  
NOTES:  
1. Pulse test : 300µS pulse width, 1% duty cycle.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.  
3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.500” (12.7mm) lead length with 2.5x2.5” (63.5x63.5mm) copper  
pad.  
REV:A  
Page 1  
QW-BB043  
Comchip Technology CO., LTD.  
ESD Leaded Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
RATING AND CHARACTERISTIC CURVES (SB520E-G Thru. SB5100E-G)  
Fig.1 Forward Current Derating Curve  
Fig.2 Maximum Non-repetitive Peak  
Forward Surge Current  
6.0  
5.0  
4.0  
3.0  
2.0  
200  
TL=110°C  
8.3mS single half sine-wave  
(JEDEC Method)  
150  
100  
SB520E-G ~ SB545E-G  
SB520E-G ~ SB545E-G  
SB550E-G ~ SB5100E-G  
50  
0
1.0  
0
SB550E-G ~ SB5100E-G  
single phase half wave 60Hz  
resistive or inductive load  
3.75”(9.5mm) lead length  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
Lead Temperature ( OC)  
Number of Cycles at 60Hz  
Fig.3 Typical Instantaneous Forward  
Characteristics  
Fig.4A Typical Reverse Characteristics  
SB520E-G ~ SB545E-G  
50  
10  
100  
10  
TJ=125°C  
SB580E-G ~ SB5100E-G  
SB550E-G ~ SB560E-G  
1.0  
0.1  
1
TJ=100°C  
0.1  
0.01  
TJ=25°C  
SB520E-G ~ SB545E-G  
0.001  
0.01  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Instantaneous Forward Voltage (V)  
0
20  
40  
60  
80  
100  
120  
140  
Percent of Rated Peak Reverse Voltage (%)  
Fig.5 Typical Junction Capacitance per leg  
Fig.4B Typeical Reverse Characteristic  
105  
104  
10,000  
SB550E-G ~ SB5100E-G  
TJ=150°C  
TJ=125°C  
103  
102  
1,000  
TJ=75°C  
101  
1
TJ=25°C  
f=1.0MHz  
TJ=25°C  
80 100  
Vsig=50mVp-p  
100  
0
20  
40  
60  
0.1  
1.0  
10  
100  
Reverse Voltage (V)  
Percent of Rated Peak Reverse Voltage ( %)  
REV:A  
Page 2  
QW-BB043  
Comchip Technology CO., LTD.  
ESD Leaded Schottky Barrier Rectifiers  
Marking Code  
Comchip  
S M D D i o d e S p e c i a l i s t  
Marking code  
Packaging  
Part Number  
SB520ET-G  
SB540ET-G  
SB545ET-G  
SB550ET-G  
SB560ET-G  
SB580ET-G  
SB5100ET-G  
SB520EA-G  
SB540EA-G  
SB545EA-G  
SB550EA-G  
SB560EA-G  
SB580EA-G  
SB5100EA-G  
SB520EB-G  
SB540EB-G  
SB545EB-G  
SB550EB-G  
SB560EB-G  
SB580EB-G  
SB5100EB-G  
SB520E  
SB540E  
SB545E  
SB550E  
SB560E  
SB580E  
SB5100E  
SB520E  
SB540E  
SB545E  
SB550E  
SB560E  
SB580E  
SB5100E  
SB520E  
SB540E  
SB545E  
SB550E  
SB560E  
SB580E  
SB5100E  
REEL  
REEL  
REEL  
REEL  
REEL  
REEL  
REEL  
AMMO  
AMMO  
AMMO  
AMMO  
AMMO  
AMMO  
AMMO  
BULK  
BULK  
BULK  
BULK  
BULK  
BULK  
BULK  
SBXXXE  
XXX / XXXX = Product type marking code  
Note:  
1) Suffix code after part number to specify packaging item .  
Packaging  
REEL PACK  
AMMO PACK  
BULK PACK  
Code  
T
A
B
Standard Packaging  
BULK PACK  
REEL PACK  
Case Type  
Case Type  
REEL  
Reel Size  
BOX  
( pcs )  
(inch)  
( pcs )  
1,200  
200  
DO-201AD  
13  
DO-201AD  
AMMO PACK  
Case Type  
DO-201AD  
BOX  
( pcs )  
1,200  
REV:A  
Page 3  
QW-BB043  
Comchip Technology CO., LTD.  

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