SR10150-G [COMCHIP]
Dual Schottky Barrier Rectifiers; 双肖特基整流器
| 型号： | SR10150-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Dual Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual Schottky Barrier Rectifiers
SR10150-G Thru. SR10200-G
Forward current: 10A
Reverse voltage: 150 to 200V
RoHS Device
ITO-220AB
0.189(4.80)max
0.404(10.27)
0.383( 9.72)
Features
-Extremely Low VF
ψ0.134(3.4)
0.272(6.90)
0.248(6.30)
0.122(3.10)max
0.610(15.50)
0.571(14.50)
-Low Stored Charge, Majority Carrier Conduction
-Low Power Loss / High Efficiency
-UL 94V0 Flame Retardant Epoxy Molding Compound
-Lead Free
1
2
3
0.161(4.10)max
Mechanical data
0.543(13.80)
0.512(13.00)
0.060(1.52)MAX
0.035(0.90)MAX
-Case: Transfer Molded
0.031(0.80)MAX
-Leads: Solderable per MIL-STD-202,
method 208
0.105(2.67)
0.095(2.41)
0.114(2.90)
0.098(2.50)
-Polarity: As Marked
-Weight: 2.05 grams
PIN 1
PIN 3
PIN 2
CASE
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Symbol
VRRM
SR10150-G
SR10200-G
Ratings
Unit
Maximum Recurrent Peak Reverse Voltage
150
105
150
200
140
200
V
V
V
Maximum RMS Voltage
VRWS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
10.0
5.0
IO
A
A
See Fig.1
Per Leg
Peak Forward Surge Current, 8.3ms Single
Half Sine-Wave Superimposed On Rated Load
(JEDEC Method)
IFSM
120
Operating Temperature Range And Storage
Temperature Range
Top,TSTG
-55 to +150
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Symbol
SR10150-G
SR10200-G
SR10200-G
Characteristics
Unit
Maximum Forward Voltage At 5A Per Leg
VF
0.95
500
10
V
Maximum Reverse Current At 25°C Per Leg
(Note 1 )
uA
IR
IR
Maximum Reverse Current At 125°C Per Leg
(Note 1 )
mA
Thermal Characteristics (At Ta=25°C, unless otherwise noted)
Symbol
SR10150-G
Parameter
Units
Typical Thermal Tesistance Junction to Case
Per Leg
RθJC
4.0
°C/W
NOTES : 1.Pulse Test : 300μS Pulse Width ,1% Duty Cycle
REV:A
Page 1
QW-BB031
Comchip Technology CO., LTD.
Dual Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (SR10150-G Thru. SR10200-G)
Fig.1 Forward Current Derating Curve
Fig.2 Maximum Non-Repetitive Surge Current
12.5
10
120
100
80
60
40
20
0
TL=75°C
8.3ms SINGLE HALF SINE-WAVE
JEDEC METHOD
7.5
5.0
2.5
0
0
50
100
150
1
5
10
100
Case Temperature, ( OC)
Number of Cycles at 60Hz
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Instantaneous Forward Characteristics
100
10
50
10
TJ=100°C
TJ=75°C
1.0
0.1
1.0
TJ=25°C
Pulse Width=300us
2% Duty cycle
TJ=25°C
0.01
0.1
0
20
40
60
80
100
120
140
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Peraent or Rated Voltage Peak Reverse Voltage, (V)
Instantaneous Forward Voltage, (V)
REV:A
Page 2
QW-BB031
Comchip Technology CO., LTD.
相关型号：
SR10150C
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
RECTRON
SR10150KR
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3
RECTRON
SR10150KS
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2-PAK, 3 PIN
RECTRON
©2020 ICPDF网 联系我们和版权申明