SR30100PT-G [COMCHIP]
Schottky Barrier Rectifier; 肖特基势垒整流器型号: | SR30100PT-G |
厂家: | COMCHIP TECHNOLOGY |
描述: | Schottky Barrier Rectifier |
文件: | 总3页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky Barrier Rectifier
SR3030PT-G Thru. SR30150PT-G
Reverse Voltage: 30 to 1000V
Forward Current: 30.0A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
TO-3P
0.646(16.40)
0.203(5.16)
0.193(4.90)
0.626(15.90)
0.134(3.40)
0.244(6.20)
0.224(5.70)
0.114(2.90)
0.085(2.16)
0.075(1.90)
-High current capability, low VF.
-High surge capacity.
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
0.091(2.30)
0.078(1.97)
0.858(21.80)
0.819(20.80)
Mechanical Data
0.095(2.40)
0.083(2.10)
-Case: TO-3P, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
0.127(3.22)
0.161(4.10)
0.138(3.50)
0.117(2.97)
0.086(2.18)
0.076(1.93)
0.795(20.20)
0.776(19.70)
0.030(0.76)
0.020(0.51)
-Weight: 5.6 grams
0.224(5.70)
0.205(5.20)
0.048(1.22)
0.044(1.12)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SR3030
PT-G
SR3040
PT-G
SR3050
PT-G
SR3060
SR3080
PT-G
SR30100 SR30150
Symbol
Unit
Parameter
PT-G
PT-G
100
70
PT-G
150
105
150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
30
21
30
40
28
40
50
35
50
60
80
56
80
V
V
V
V
42
Maximum DC Blocking Voltage
VDC
60
100
Maximum Average Forward Rectified Current
I
(AV)
30
A
A
(See Fig.1)
@Tc=95°C
Peak Forward Surage Current , 8.3ms Single
Half Sine-Wave Super Imposed On Rated
Load (JEDEC Method)
IFSM
275
Peak Forward Voltage at 15.0A DC
VF
0.55
0.70
0.85
0.95
V
@TJ=25°C
Maximum DC Reverse Current
At Rate DC Blocking Voltage
1.0
75
IR
mA
@TJ=100°C
Typical Junction Capacitandce (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Notes:
pF
°C/W
°C
C
J
700
2.0
RθJA
TJ
-55 to +125
-55 to +150
TSTG
°C
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to case.
REV:A
Page 1
QW-BB045
Comchip Technology CO., LTD.
Schottky Barrier Rectifier
Rating and Characteristics Curves (SR3030PT-G Thru. SR30150PT-G)
Fig.1- Forward Current Derating Curve
Fig.2- Typical Forward Characteristics
30
100
10
SR3030PT-G - SR3040PT-G
25
20
15
10
5
SR3050PT-G - SR3060PT-G
SR3080PT-G - SR30100PT-G
SR30150PT-G
1.0
0.1
Singlephase half wave 60Hz
Resistive or inductive load
TJ = 25°C
Pulse width 300us
2% Duty cycle
0
0
25
50
75
100
125
150
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage, (V)
Case Temperature, (°C )
Fig.3- Maximum Non-Repetitive
Surge Current
Fig.4- Typical Junction Capacitance
400
350
300
250
200
150
100
50
10000
1000
100
Pulse width 8.3ms
Single half-sine-wave
(JEDEC Method)
TJ = 25°C , f = MHZ
0
1
10
100
1
1.0
10.0
100
Number of Cycles at 60Hz
Reverse Voltage , (V)
Fig.5- Typical Reverse Characteristics
100
TJ =100°C
TJ =75°C
10
1.0
0.1
TJ =25°C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
REV: A
Page 2
QW-BB045
Comchip Technology CO., LTD.
Schottky Barrier Rectifier
Marking Code
Marking code
Part Number
SR3030PT-G
SR3040PT-G
SR3050PT-G
SR3060PT-G
SR3080PT-G
SR30100PT-G
SR30150PT-G
SR3030PT
SR3040PT
SR3050PT
SR3060PT
SR3080PT
SR30100PT
SR30150PT
C
SR30XXXPT
XX / XXX = Product type marking code
C = Compchip Logo
Standard Package
BULK PACK
Case Type
BOX
CARTON
( pcs )
( pcs )
500
2,000
TO-3P
Rev. A
QW-BB045
Page 3
相关型号:
SR30150C
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 150V V(RRM), Silicon, TO-247AB, PLASTIC, ROHS COMPLIANT, 3 PIN
RECTRON
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