SS12-G [COMCHIP]
SMD Schottky Barrier Rectifier; SMD肖特基整流器
| 型号： | SS12-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Schottky Barrier Rectifier |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Schottky Barrier Rectifier
SS12-G THRU SS110-G
Reverse Voltage: 20~100 Volts
Forward Current: 1.0 Amp
Features
DO-214AC (SMA)
ꢀ Ideal for surface mount application
ꢀ Easy pick and place
ꢀ Plastic package has Underwriters Lab.
Flammability classification 94V-0
ꢀ Built-in strain relief
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
0.180(4.57)
0.160(4.06)
ꢀ Low forward voltage drop
0.012(0.31)
0.006(0.15)
Mechanical Data
ꢀ Case: JEDEC DO-214AC molded plastic
ꢀ Terminal: Solderable per MIL-STD-750 method
2026 guaranteed
0.091(2.31)
0.067(1.70)
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
ꢀ Polarity: Color band denotes cathode end
ꢀ Mounting position: Any
0.209(5.31)
0.185(4.70)
ꢀ Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Symbol
SS12-G
SS14-G
SS16-G
SS18-G
SS110-G
Parameter
Unit
VRRM
VDC
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
20
20
14
40
40
28
80
80
56
100
100
70
V
V
V
60
60
42
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
35
I o
V F
I R
1.0
Max. Average Forward Current
A
V
Max. Instantaneous ForwardCurrent
at 1.0 A
0.50
0.70
0.85
5
Max. DC ReverseCurrent at RatedDC
Blocking Voltage
Ta=25
C
0.5
.
mA
10
C
Ta=100
88
20
R
JA
JL
Max. Thermal Resistance(Note 1)
C/W
R
- 5 0 t o + 1 2 5
T j
Operating Junction Temperature
Storage Temperature
C
C
TSTG
- 6 5 t o + 1 5 0
Note 1: Thermalresistance from junctionto ambient andjunction to tolead P.C.B. Mounted on0.2 x 0.2copper pad areas
“-G” suffix designates RoHS compliant Version
SMD Schottky Barrier Rectifier
Rating and Characteristic Curves (SS12-G Thru SS110-G)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
10
100
10
CDBA120-140
CDBA160
CDBA180-1100
1
0.1
1
0.1
Tj=75 C
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
0.01
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
1.9 2.1
0
20
40
60
80
100
120
140
160
180
200
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Current Derating Curve
350
300
250
200
150
100
=1MHz and applied
4VDC reverse voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
50
0
160
0.01
0.1
1.0
10
100
20
40
60
80
100
120
140
Ambient Temperature ( C)
Reverse Voltage(V)
Fig. 5 - Non repetitive forward
surge current
50
40
30
20
10
8.3mS Single HalfSine
Wave JEDEC methode
Tj=25 C
0
1
5
10
50
1 00
Number of Cyclesat 60Hz
相关型号：
SS12-GT3
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN
SENSITRON
SS12-HE3
DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
SS12-HE3/61T
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
VISHAY
SS12-L
Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN
MICROSEMI
SS12-LT-TP
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
MCC
©2020 ICPDF网 联系我们和版权申明