SS24-G [COMCHIP]

SMD Schottky Barrier Rectifier; SMD肖特基整流器
SS24-G
型号: SS24-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

SMD Schottky Barrier Rectifier
SMD肖特基整流器

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中文:  中文翻译
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SMD Schottky Barrier Rectifier  
SS22-G THRU SS210-G  
Reverse Voltage: 20 ~ 100 Volts  
Forward Current: 2.0 Amp  
Features  
Ideal for surface mount applications  
SMB/DO-214AA  
Easy pick and place  
Plastic package has Underwriteers lab.  
flammability classification 94V-0  
Built-in strain relief  
0.083(2.11)  
0.075(1.91)  
0.155(3.94)  
0.130(3.30)  
Low forward voltage drop  
0.185(4.70)  
0.160(4.06)  
0.012(0.31)  
0.006(0.15)  
Mechanical Data  
0.096(2.44)  
0.083(2.13)  
Case: JEDEC DO-214AA molded plastic  
Terminal: Solderable per MIL-STD-750  
method 2026  
Polarity: Color band denotes cathode end  
Mounting position: Any  
0.008(0.20)  
0.203(0.10)  
0.050(1.27)  
0.030(0.76)  
0.220(5.59)  
0.200(5.08)  
Dimensions in inches and (millimeter)  
Weight: 0.093 gram  
Maximum Rating and Electrical Characteristics  
Symbol  
Parameter  
Unit  
SS22-G  
SS24-G  
SS26-G  
SS210-G  
VRRM  
VDC  
40  
40  
28  
60  
60  
42  
100  
100  
70  
Max.Repetitive Peak ReverseVoltage  
Max. DC BlockingVoltage  
Max. RMS Voltage  
20  
20  
14  
V
V
V
VRMS  
Peak Surge ForwardCurrent  
8.3ms single halfsine-wave  
superimposed on rateload  
( JEDEC method)  
IFSM  
A
50  
I o  
V F  
I R  
2.0  
Max. Average Forward Current  
A
Max. Instantaneous ForwardCurrent  
at 2.0 A  
0.70  
0.85  
10  
0.50  
V
Max. DC ReverseCurrent at RatedDC  
Blocking Voltage  
Ta=25  
C
0.5  
mA  
C
Ta=100  
20  
R
R
JA  
JL  
Max. Thermal Resistance(Note 1)  
75  
17  
C/W  
- 5 0 t o + 1 2 5  
- 6 5 t o + 1 5 0  
T j  
TSTG  
Operating Junction temperature  
Storage Temperature  
C
C
Note 1: Thermalresistance from junctionto ambient andjunction to tolead P.C.B. Mounted on0.2 x 0.2copper pad areas  
-G” suffix designates RoHS compliant Version  
SMD Schottky Barrier Rectifier  
Rating and Characteristic Curevs (SS22-G Thru SS2100-G)  
Fig. 1 - Reverse Characteristics  
Fig.2 - Forward Characteristics  
100  
10  
100  
10  
CDBB220-240  
CDBB260  
CDBB280-2100  
1
0.1  
1
0.1  
Tj=75 C  
Tj=25 C  
Pulse width 300uS  
4% duty cycle  
Tj=25 C  
0.01  
0.01  
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7  
1.9 2.1  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
Forward Voltage (V)  
Percent of RatedPeakReverse Voltage (%)  
Fig. 3 - Junction Capacitance  
Fig. 4 - Current Derating Curve  
350  
300  
250  
200  
150  
100  
=1MHz and applied  
4VDC reverse voltage  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
50  
0
0.01  
0.1  
1.0  
10  
100  
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature ( C)  
Reverse Voltage(V)  
Fig. 5 - Non Repetitive Forward  
Surge Current  
50  
40  
8.3mS Single HalfSine  
Wave JEDEC methode  
30  
20  
Tj=25 C  
10  
0
1
5
10  
50  
1 00  
Number of Cyclesat 60Hz  

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