2N2322 [COMSET]
SILICON THYRISTORS; 硅闸流体
| 型号： | 2N2322 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON THYRISTORS |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2n2322 to 2n2326
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
Symbol
VRRM(REP)
Ratings
Peak reverse blocking voltage
(*)
25
40
50
75
100
150
1.6
150
225
200
300
V
V
A
VRSM(NON- Non-repetitive peak blocking
REP)
reverse voltage (t<5.0 ms)
Forward Current RMS (all
conduction angles)
IT(RMS)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
ITSM
15
A
Equilibrium is Restored.
PGM
Peak Gate Power – Forward
0.1
W
W
Average Gate Power -
Forward
PG(AV)
0.01
IGM
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
0.1
6.0
6.0
A
V
V
VGFM
VGRM
Operating Junction
Temperature Range
TJ
-65 to +125
-65 to +150
°C
TSTG
Storage Temperature Range
12/11/2012
COMSET SEMICONDUCTORS
1 | 3
2n2322 to 2n2326
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
VDRM
Ratings
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
Peak Forward Blocking
Voltage (1)
Min :
25
50
100
150
200
V
Peak Reverse Blocking
Current
IRRM
Max : 100
µA
(Rated VDRM, TJ =125°C)
Peak Forward Blocking
Current
IDRM
Max : 100
µA
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
ITM=1.0 A Peak
ITM =3.14 A Peak
TC =85°C
Max : 1.5
Max : 2.0
VTM
V
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc
RL=100Ω
Anode Voltage=6.0 Vdc
RL=100Ω, TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V
RL=100Ω
Anode Voltage=6.0 V
RL=100Ω, TC=-65°C
VDRM = Rated
RL=100Ω, TJ=125°C
Holding Current
Max : 200
Max : 350
IGT
µA
Max : 0.8
Max : 1.0
Min : 0.1
VGT
V
Anode Voltage=6.0 V
Anode Voltage=6.0 V
TC=-65°C
Max : 2.0
Max : 3.0
IH
mA
Anode Voltage=6.0 V
TC=125°C
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring
damage.
(2) RGK current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2 | 3
2n2322 to 2n2326
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
8.50
7.74
6.09
0.40
-
max
9.39
8.50
6.60
0.53
0.88
2.66
5.33
0.86
1.02
-
A
B
C
D
E
F
G
H
J
2.41
4.82
0.71
0.73
12.70
42°
K
L
48°
Pin 1 :
kathode
Pin 2 :
Pin 3 :
Case :
Gate
Anode
anode
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
12/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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