2N3439 [COMSET]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | 2N3439 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N3439 – 2N3440
HIGH VOLTAGE TRANSISTOR
C
E
The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors
mounted in TO-39 metal package.
They are intended for use in power amplifier, in consumer and
industrial line-operated applications.
These devices are particularity suited as drives in high voltage low
current inverters, switching and series regulators.
Compliance to RoHS.
B
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
VCEO
Ratings
Unit
2N3439
2N3440
Collector-Emitter
Voltage
Collector-Base Voltage IE = 0
Emitter-Base Voltage
Collector Current
Base Current
IB = 0
350
450
250
300
V
VCBO
VEBO
IC
V
V
A
IC = 0
7
1
500
IB
mA
T
amb = 25°
1
10
PD
Total Power Dissipation
W
Tcase = 25°
TJ
TStg
Junction Temperature
Storage Temperature range
200
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
175
35
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N3439 – 2N3440
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICBO
Ratings
Test Condition(s)
Min
Typ Max Unit
VCB = 360 V, IE = 0
2N3439
2N3440
2N3439
2N3440
Collector Cutoff
Current
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current
-
-
20
µA
µA
µA
µA
V
VCB = 250 V, IE = 0
VCE = 300 V, IB = 0
VCE = 200 V, IB = 0
-
-
-
-
20
50
ICEO
VCE = 450 V, VBE = -1.5 V 2N3439
VCE = 300 V, VBE = -1.5 V 2N3440
ICEX
-
-
-
-
500
20
2N3439
2N3440
IEBO
VBE = 6 V, IC = 0
2N3439 350
2N3440 250
-
-
-
-
-
-
Collector-emitter
Breakdown Voltage
VCEO
IC = 50 mA, IB = 0
IC = 2 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
2N3439
2N3439
2N3440
30
hFE
DC Current Gain
-
40
-
-
-
-
-
160
0.5
1.3
-
Collector-Emitter
saturation Voltage
Base-Emitter
VCE(SAT)
VBE(SAT)
fT
IC = 50 mA, IB = 4 mA
IC = 50 mA, IB = 4 mA
-
-
V
V
saturation Voltage
IC = 10 mA, VCB = 10 V
f = 5 MHz
Transition frequency
15
-
MHz
pF
Cob
Output Capacitance VCB = 10 V, f = 1MHz
10
08/08/2012
COMSET SEMICONDUCTORS
2/3
NPN 2N3439 – 2N3440
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
8.50
7.74
6.09
0.40
-
max
9.39
8.50
6.60
0.53
0.88
2.66
5.33
0.86
1.02
-
A
B
C
D
E
F
G
H
J
2.41
4.82
0.71
0.73
12.70
42°
K
L
48°
Pin 1 :
Emitter
Base
Pin 2 :
Pin 3 :
Case :
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
info@comsetsemi.com
08/08/2012
COMSET SEMICONDUCTORS
3/3
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