2N3773 [COMSET]
HIGH POWER TRANSISTOR; 大功率晶体管
| 型号： | 2N3773 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | HIGH POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N3773
HIGH POWER TRANSISTOR
The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case.
They are intended for linear amplifiers and inductive switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
VCBO
VEBO
VCEX
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
IB = 0
IE = 0
IC = 0
140
160
7
160
V
V
V
V
A
V
BE = -1.5V
16
ICM
IB
IBM
Collector Peak Current
Base Current
Base Peak Current
30
4
15
A
A
A
Pt
TJ
TStg
Total Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
150
150
-65 to +200
W
°C
°C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min
Typ Max Unit
Collector-Emitter Sustaining
Voltage (*)
Collector Cutoff Current
VCEO(SUS)
ICEO
IC= 200 mA, IB = 0
140
-
-
-
-
V
VCE= 140 V, IB= 0
-
-
2
2
mA
VCE= 140 V, VBE= -1.5V
VCE= 140 V, VBE= -1.5V
ICEX
Collector Cutoff Current
mA
-
-
10
T
case = 150°C
IEBO
hFE
Emitter Cutoff Current
DC Current Gain (*)
VEB= 7 V, IC= 0
-
15
5
-
-
-
-
-
-
-
-
-
5
60
-
1.4
4
mA
-
IC= 8 A, VCE= 4 V
IC= 16 A, VCE= 4 V
IC= 8 A, IB= 800 mA
IC= 16 A, IB= 3.2 A
IC= 8 A, VCE= 4 V
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Second breakdown collector
current
VCE(SAT)
VBE
V
V
A
2.2
IS/B
VCE= 100 V, ts = 1s
1.5
-
-
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
21/09/2012 COMSET SEMICONDUCTORS
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NPN 2N3773
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, Junction to Case
1.17
°C/W
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11
13.10
1.15
1.65
8.92
20
0.97
1.5
8.32
19
G
N
P
R
U
V
10.70
16.50
25
11.1
17.20
26
4
4.09
39.30
30.30
38.50
30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
21/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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相关型号：
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MICROSEMI
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