2N3773 [COMSET]

HIGH POWER TRANSISTOR; 大功率晶体管
2N3773
型号: 2N3773
厂家: COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述:

HIGH POWER TRANSISTOR
大功率晶体管

晶体 晶体管 局域网 高功率电源
文件: 总2页 (文件大小:76K)
中文:  中文翻译
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NPN 2N3773  
HIGH POWER TRANSISTOR  
The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case.  
They are intended for linear amplifiers and inductive switching applications.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
VCEO  
VCBO  
VEBO  
VCEX  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
IB = 0  
IE = 0  
IC = 0  
140  
160  
7
160  
V
V
V
V
A
V
BE = -1.5V  
16  
ICM  
IB  
IBM  
Collector Peak Current  
Base Current  
Base Peak Current  
30  
4
15  
A
A
A
Pt  
TJ  
TStg  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
150  
150  
-65 to +200  
W
°C  
°C  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
Ratings  
Min  
Typ Max Unit  
Collector-Emitter Sustaining  
Voltage (*)  
Collector Cutoff Current  
VCEO(SUS)  
ICEO  
IC= 200 mA, IB = 0  
140  
-
-
-
-
V
VCE= 140 V, IB= 0  
-
-
2
2
mA  
VCE= 140 V, VBE= -1.5V  
VCE= 140 V, VBE= -1.5V  
ICEX  
Collector Cutoff Current  
mA  
-
-
10  
T
case = 150°C  
IEBO  
hFE  
Emitter Cutoff Current  
DC Current Gain (*)  
VEB= 7 V, IC= 0  
-
15  
5
-
-
-
-
-
-
-
-
-
5
60  
-
1.4  
4
mA  
-
IC= 8 A, VCE= 4 V  
IC= 16 A, VCE= 4 V  
IC= 8 A, IB= 800 mA  
IC= 16 A, IB= 3.2 A  
IC= 8 A, VCE= 4 V  
Collector-Emitter saturation  
Voltage (*)  
Base-Emitter Voltage (*)  
Second breakdown collector  
current  
VCE(SAT)  
VBE  
V
V
A
2.2  
IS/B  
VCE= 100 V, ts = 1s  
1.5  
-
-
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%  
21/09/2012 COMSET SEMICONDUCTORS  
1/2  
NPN 2N3773  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
Thermal Resistance, Junction to Case  
1.17  
°C/W  
MECHANICAL DATA CASE TO-3  
DIMENSIONS (mm)  
min  
max  
A
B
C
D
F
11  
13.10  
1.15  
1.65  
8.92  
20  
0.97  
1.5  
8.32  
19  
G
N
P
R
U
V
10.70  
16.50  
25  
11.1  
17.20  
26  
4
4.09  
39.30  
30.30  
38.50  
30  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Revised August 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change  
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and  
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical  
components in life support devices or systems.  
www.comsetsemi.com  
21/09/2012  
info@comsetsemi.com  
COMSET SEMICONDUCTORS  
2/2  

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