2N3866 [COMSET]
SILICON PLANAR EPITAXIAL TRANSISTORS; 硅平面外延晶体管
| 型号： | 2N3866 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON PLANAR EPITAXIAL TRANSISTORS |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N3866
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector
connected to the case .
They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE = 0)
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
30
55
3.5
0.5
5
V
V
V
VCES
VEBO
IC
PD
TJ
A
@ Tcase= 25°
Watts
°C
200
TStg
Storage Temperature range
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol Ratings
Value
Unit
Thermal Resistance, Junction-case
RthJ-c
35
°C/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min
Typ Max Unit
ICEO
Collector Cutoff Current
Collector Emitter Sustaining
Voltage
VCE=28 V, IB=0
-
-
20
µA
VCEO (*)
IC=5 mA, IB=0
30
-
-
V
VCES
VEBO
Collector Base Breakdown Voltage IC=100 µA, VBE=0
Emitter Base Breakdown Voltage IE=100 µA, IC=0
55
3.5
10
5
-
-
-
-
-
V
V
-
200
-
IC=50 mA, VCE=5 V
hFE (*)
DC Current Gain
-
IC=360 mA, VCE=5 V
Collector-Emitter saturation
Voltage
IC=100 mA
IB=20 mA
VCE(SAT) (*)
-
-
1
V
COMSET SEMICONDUCTORS
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NPN 2N3866
Test Condition(s)
Symbol
Ratings
Min
Typ Max Unit
IC=50 mA, VCE=15 V
f= 200MHz
IE= 0 ,VCB= -28 V
f = 1MHz
VCC= -28V
Pi =100 mW
f = 400 MHz
VCC= -28V ,Po =1 W
f = 400 MHz
fT
Transition Frequency
500
-
-
-
MHz
pF
CCBO
Collector-Base Capacitance
-
1
3
PO (**)
Output Power
-
-
-
-
pF
ps
Collector Efficiency
45
η (**)
(*) Pulse conditions : tp < 300 µs, δ =1%.
(**) See test circuit.
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm
6,25
13,59
9,24
8,24
0,78
1,05
0,42
45°
A
B
C
D
E
F
G
H
L
4,1
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Emitter
Base
Collector
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
11/09/2012
info@comsetsemi.com
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