2N5320 [COMSET]
SILICON PLANAR EPITAXIAL TRANSISTORS; 硅平面外延晶体管
| 型号： | 2N5320 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON PLANAR EPITAXIAL TRANSISTORS |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN 2N5320 – 2N5321
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and commercial
equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
75
50
100
75
100
75
6
Collector-Emitter Voltage (IB = 0)
VCEO
VCBO
VCEV
VEBO
IC
V
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V)
Emitter-Base Voltage (IC = 0)
V
V
V
A
A
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
5
Collector Current
Base Current
2
IB
1
@ Tamb = 25°
@ Tcase= 25°
1
10
Total Power Dissipation
PD
Watts
Junction Temperature
TJ
-65 to +200
°C
°C
2N5321
2N5320
2N5321
Storage Temperature range
TStg
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N5320
2N5321
2N5320
2N5321
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
RthJ-a
RthJ-c
175
°C/W
17.5
°C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
VCB = 80 V, IE =0
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
-
-
-
-
-
0.5
5
-
-
-
-
-
-
-
Collector Cutoff Current
µA
µA
V
ICBO
VCB = 60 V, IE =0
VEB = 5 V, IC =0
VEB = 4 V, IC =0
0.1
0.5
Emitter Cutoff Current
IEBO
-
Collector Emitter Breakdown
Voltage
Collector Emitter Breakdown
Voltage
Emitter Base Breakdown
Voltage
75
50
100
75
6
5
30
40
-
-
-
-
-
-
-
-
IC = 10 mA, IB =0
VCEO
VCEV
VEBO
IC = 100 µA
VBE = 1.5V
V
IE = 100 µA, IC =0
V
-
IC = 500 mA
VCE = 4 V
130
250
DC Current Gain
-
hFE (1)
IC = 1 A
VCE = 2 V
2N5320
10
-
-
Collector-Emitter saturation
Voltage
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
-
-
-
-
-
-
-
-
0.5
0.8
1.1
1.4
IC = 500 mA, IB = 50 mA
IC = 500 mA, VCE = 4 V
V
V
VCE(SAT) (1)
Base-Emitter Voltage
Transition frequency
Turn-on Time
VBE (1)
IC = 50 mA, VCE = 4 V
f = 10 MHz
50
-
-
-
-
-
MHz
ns
fT
IC = 500 mA, VCC = 30 V
80
ton
toff
I
B1 = 50 mA
IC = 500 mA, VCC = 30 V
B1 = -IB2 = 50 mA
Turn-off Time
-
800
ns
I
(1) Pulse conditions : tp < 300 µs, δ =1%
COMSET SEMICONDUCTORS
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NPN 2N5320 – 2N5321
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min typ max
A
B
D
E
F
G
H
I
12.7
-
-
-
-
-
-
-
-
-
-
-
0.49
6.6
8.5
9.4
-
-
-
-
5.08
-
1.2
0.9
-
-
L
45°
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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