概述
数据手册BC141/10 概述
GENERAL PURPOSE TRANSISTORS 通用晶体管
BC141/10 数据手册
通过下载BC141/10数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
GENERAL PURPOSE TRANSISTORS
They are silicon planar epitaxial NPN transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
PNP complements are the BC160 – BC161.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BC140
BC141
BC140
BC141
BC140
BC141
BC140
80
100
40
Collector-Base Voltage
IE = 0
VCBO
V
Collector-Emitter Voltage
IB = 0
VCEO
VEBO
IC
V
V
60
Emitter-Base Voltage
IC = 0
7
Collector Current
Base Current
1
A
BC141
BC140
BC141
IB
0.1
A
@ Tcase= < 45°
3.7
0.65
Ptot
Watts
@ Tamb= < 45°
Junction Temperature
Storage Temperature range
TJ
TStg
175
-55 to +175
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
RthJ-c
RthJ-amb
35
200
K/ W
K/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
COMSET SEMICONDUCTORS
1/3
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
BC140
IE= 0 ;VCES= 60 V
-
-
-
-
100
100
nA
µA
V
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
Collector – Cutoff Current
ICES
IE= 0 ; VCES= 60 V
Tamb = 150°c
Collector – Base Breakdown
Voltage
80
100
40
-
-
-
-
-
-
-
-
IC = 100 µA
IE= 0
VCB0
Collector – Emitter
Breakdown Voltage
Emitter – Base Breakdown
Voltage
IC = 30 mA
IB= 0
V
V
CE0 (*)
60
IE= 100 µA
IC= 0
7
-
-
V
VEB0
IC= 100 mA , IB= 10 mA
IC= 500 mA , IB= 50 mA
IC= 1 A, IB= 100 mA
-
-
-
0.1
0.35
0.6
VCE(SAT) (*)
Collector-Emitter saturation
Voltage
V
1
IC= 1 A , VCE= 1V
Base-Emitter Voltage
DC Current Gain
1.25 1.8
V
BE (*)
-
-
-
75
40
90
-
-
-
IC= 100 µA , VCE= 1 V
Gr 10
Gr 16
40
63
100
-
-
-
140 250
100 160
160 250
IC= 100 mA , VCE= 1 V
IC= 1 A , VCE= 1 V
-
h
FE (*)
Gr 10
Gr 16
26
20
30
-
-
-
-
-
Gr 10
Gr 16
IC= 50 mA , VCE= 10 V
MHZ
pF
Transition Frequency
Collector – base
Capacitance
50
fT
IE= 0 ;VCB= 10V
f = 1 MHZ
-
-
-
12
-
25
CCBO
IC=100 mA
IB1=-IB2=5 mA
Turn-off times
Turn-on times
850
250
ns
ns
toff
ton
IC=100 mA
IB1=1 mA
-
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
COMSET SEMICONDUCTORS
2/3
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
6,25
13,59
9,24
8,24
0,78
1,05
0,42
45°
4,1
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
BC141/10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BC141/16 | COMSET | GENERAL PURPOSE TRANSISTORS | 获取价格 |
|
| BC141G | NJSEMI | Trans GP BJT NPN 60V 1A 3-Pin TO-39 Box | 获取价格 |
|
| BC141LEADFREE | CENTRAL | 暂无描述 | 获取价格 |
|
| BC142 | MICRO-ELECTRONICS | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | 获取价格 |
|
| BC143 | MICRO-ELECTRONICS | PNP SILICON PLANAR EPITAXIAL TRANSISTOR | 获取价格 |
|
| BC143ES6R | ETC | Mini size of Discrete semiconductor elements | 获取价格 |
|
| BC143EUS6R | ETC | Mini size of Discrete semiconductor elements | 获取价格 |
|
| BC143TS6R | ETC | Mini size of Discrete semiconductor elements | 获取价格 |
|
| BC143TUS6R | ETC | Mini size of Discrete semiconductor elements | 获取价格 |
|
| BC143XS6R | ETC | Mini size of Discrete semiconductor elements | 获取价格 |
|
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