BC262C [COMSET]
Transistor;
| 型号： | BC262C |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP BC261 – BC262 – BC263
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
They are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
The BC261 is intended for audio amplifier driver tages.
The BC262 is intended for general purpose applications.
The BC262 is intended for low noise, high gain pre-amplifier tage.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
BC261 BC262 BC263
Symbol
Unit
VCEO
VCES
VEBO
IC
ICM
PD
Collector-Emitter Voltage (IB =0)
Collector- Emitter Voltage (VBE =0)
Emitter-Base Voltage (IC =0)
Collector Current
-45
-50
-25
-30
-5
-100
-200
-25
-30
V
V
V
mA
mA
mW
°C
°C
Collector Peak Current
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
300
175
-55 to +150
TJ
TStg
Storage Temperature range
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s) Min
Typ
Max
-50
Unit
nA
VCB =-45 V
BC261
BC261
-
-
-
-
VCB = -45 V
Tj = 150°C
-50
µA
Collector Cutoff Current
IE = 0
ICBO
BC262
BC263
BC262
BC263
BC261
BC262
BC263
BC261
BC262
BC263
BC261
BC262
BC263
VCB =-20 V
-
-
-
-
-50
-50
nA
µA
VCB = -20 V
Tj = 150°C
-45
-25
-25
-50
-30
-30
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter
Breakdown Voltage
IC = -2 mA
IB = 0
VCEO
VCES
VEBO
V
V
V
Collector- Emitter Voltage IC = -10 µA
(VBE =0) VBE = 0
Emitter-Base Breakdown IE = -10 µA
Voltage IC = 0
-5
-
-
18/10/2012
COMSET SEMICONDUCTORS
1 | 3
PNP BC261 – BC262 – BC263
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
VCE(SAT)
Ratings
Test Condition(s)
Min
Typ
Max
Unit
BC261
IC =-10 mA
BC262
-
-
-300
IB =-0.5 mA
BC263
Collector-Emitter
saturation Voltage
BC261
IC =-100 mA
BC262
-
-500
-
-900
-
IB =-5 mA
BC263
mV
BC261
IC =-10 mA
BC262
-
-
IB =-0.5 mA
BC263
Base-Emitter Saturation
Voltage
VBE(SAT)
BC261
IC =-100 mA
BC262
-
-850
IB =-5 mA
BC263
BC261A
BC262A
BC263A
BC261B
BC262B
BC263B
BC261C
BC262C
BC263C
BC261
125
240
450
150
-
-
-
-
260
500
900
-
IC= -2 mA
VCE= 5 V
f = 1 KHz
Small Signal Current
Gain
Hfe
-
IC =-10 mA
VCE =-5 V
f = 100 MHz
fT
Transition frequency
Noise figure
BC262
MHz
db
BC263
BC261
BC262
BC263
-
-
-
-
-
-
10
10
4
IC = -200 µA
VCE =-5 V
f = 1kHz
F
Rg=2kΩ
BC261
BC262
BC263
IE = 0
VCB =-10 V
f = 1MHz
CC
Collector capacitance
-
-
6
pF
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
500
200
°C/W
°C/W
18/10/2012
COMSET SEMICONDUCTORS
2 | 3
PNP BC261 – BC262 – BC263
ECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
max
A
B
C
D
E
F
G
H
I
12.7
-
-
0.9
-
0.49
-
5.3
4.9
5.8
-
-
2.54
-
-
-
1.2
1.16
-
L
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
emitter
base
Collector
Collector
Revised November 2013
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
25/11/2013
info@comsetsemi.com
COMSET SEMICONDUCTORS
3/3
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