BD241A [COMSET]
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS; 中功率线性和开关应用
| 型号： | BD241A |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS |
| 文件： | 总3页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN BD241 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD242, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Ratings
Value
Unit
BD241
45
60
80
100
55
BD241A
BD241B
BD241C
BD241
Collector-Emitter Voltage (IB = 0)
V
BD241A
BD241B
BD241C
BD241
70
90
115
VCER
V
Collector-Emitter Voltage (RBE = 100 Ω)
BD241A
BD241B
BD241C
VEBO
Emitter-Base Voltage (IC = 0)
5.0
V
A
IC
3
5
IC
Collector Current
ICM
IB
Base Current
1
A
@ Tamb = 25° C
@ Tcase = 25° C
2
40
150
W
W
PT
Power Dissipation
Junction Temperature
Storage Temperature
TJ
TS
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
62.5
3.13
°C/W
°C/W
23/10/2012
COMSET SEMICONDUCTORS
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NPN BD241 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO
Ratings
Test Condition(s)
Min Typ Max Unit
VCE=30 V
BD241
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VCE=30 V
VCE=60 V
VCE=60 V
BD241A
BD241B
BD241C
BD241
Collector Cutoff Current
0.3
1.0
0.2
mA
mA
mA
V
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
Emitter Cutoff Current
IEBO
VBE=5 V
VCE=55 V
VCE=70 V
VCE=90 V
VCE=115 V
-
-
-
Collector Cutoff Current
(VBE = 0)
ICES
45
60
80
100
BD241A
BD241B
BD241C
BD241
Collector-Emitter Sustaining
Voltage (IB = 0) (*)
VCEO(sus)
IC =30mA
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
VCE=4 V, IC=1 A
VCE=4 V, IC=3 A
IC=3 A, IB=0.6 A
VCE=4 V, IC=3 A
25
10
-
-
-
-
hFE
DC Current Gain (*)
-
-
-
Collector-Emitter saturation
Voltage (*)
VCE(SAT)
1.2
1.8
-
V
V
-
VBE(on)
Base-Emitter Voltage (*)
Small Signal Current Gain
-
-
VCE=10 V
IC=0.5 A
f = 1KHz
20
3
hfe
VCE=10 V
IC=0.5 A
f = 1MHz
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
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NPN BD241 – A – B – C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
9,90
Max.
10,30
A
B
C
D
E
F
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
info@comsetsemi.com
3/3
COMSET SEMICONDUCTORS
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