BD652 [COMSET]
SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
| 型号： | BD652 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON DARLINGTON POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD644/646/648/650/652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers, and analogue switching application.
NPN complements are BD643, BD645, BD647, BD649 and BD651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
45
60
80
100
120
45
60
80
100
120
Collector-Base Voltage
Collector-Emitter Voltage
-VCBO
V
-VCEO
V
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Emitter-Base Voltage
Collector Current
-VEBO
5
8
V
A
A
-IC
Collector Peak Current
12
-ICM
Page 1 of 5
BD644/646/648/650/652
Symbol
Ratings
Value
Unit
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Base Current
150
-IB
PT
TJ
Ts
mA
Power Dissipation
Junction Temperature
@ Tmb < 25°
62.5
Watts
150
°C
Storage Temperature range
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
From junction to mounting base
RthJ-MB
2
K/W
From junction to ambient in free air
RthJ-A
70
K/W
Page 2 of 5
BD644/646/648/650/652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
BD644
BD646
BD648
BD650
-IE=0,-VCB =-VCEOMAX
-
-
0.1
mA
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Collector Cutoff Current
-ICBO
-IE=0,-VCB =1/2 -VCBOMAX,
TJ=150°C
-
-
-
-
-
-
1
mA
mA
mA
Collector Cutoff Current
Emitter Cutoff Current
-IE=0, -VCE =1/2 -VCEOMAX
0.2
5.0
-ICEO
-VEB=5 V, -IC=0
-IEBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
2
2
2
-IC=4 A, -IB=16 mA
-IC=3 A, -IB=12 mA
Collector-Emitter saturation
Voltage (*)
V
-VCE(SAT)
2
2.5
2.5
2.5
2.5
2.5
-IC=5 A, -IB=50 mA
-IC=12 A, -IB=50 mA
Base-Emitter Saturation
Voltage (*)
-
-
3
V
-VBE(SAT)
Page 3 of 5
BD644/646/648/650/652
Symbol
Ratings
Value
Unit
BD644
BD646
-
-
-
-
2.5
-
-IC=4 A, -VCE=3 V
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Base-Emitter Voltage (*)
V
-VBE
2.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-IC=3 A, -VCE=3 V
-
-
-
-
-VCE=3.0 V, -IC=0.5 A
2700
-
750
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-VCE=3.0 V, -IC=4 A
DC Current Gain (*)
-
hFE
-VCE=3.0 V, -IC=3 A
750
-
-
-
-
-
10
-
-
-
-
-VCE=3.0 V, -IC=8 A
200
-
-
-
-
-
-
-
-
-
-VCE=3.0 V, -IC=4 A, f=1MHz
Small Signal Current Gain
hfe
-
10
10
10
10
-
-VCE=3.0 V, -IC=3 A, f=1MHz BD648
BD650
BD652
-
1
5
-
-
-
turn-on time
turn-off time
µs
µs
ton
toff
-IC=3 A, -IBon= IBoff=12 mA
All types
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Page 4 of 5
BD644/646/648/650/652
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
inches
A
B
C
D
E
F
9,86
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
G
H
L
M
N
P
R
S
T
1,36
0,46
2,1
5
2,51
0,79
U
Pin 1 :
Pin 2 :
Pin 3 :
Anode 1
Anode 2
Gate
Page 5 of 5
相关型号：
BD652-S
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
BOURNS
©2020 ICPDF网 联系我们和版权申明