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BD679A [COMSET]

SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
BD679A
型号： BD679A
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

SILICON DARLINGTON POWER TRANSISTORS
硅达林顿功率晶体管

晶体 晶体管 局域网
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NPN BD675/A - BD677/A - BD679/A - BD681/A  
SILICON DARLINGTON POWER TRANSISTORS  
The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126  
plastic package.  
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video  
applications.  
PNP complements are BD676/A - BD678/A - BD680/A - BD682/A  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
45  
60  
80  
100  
45  
60  
80  
100  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
VCBO  
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
5
4
6
0.1  
40  
V
A
IC  
ICM  
IBM  
IB  
PT  
TJ  
Base current (peak value)  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
A
@ Tmb = 25°C  
W
°C  
°C  
150  
-65 to +150  
TStg  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-mb  
RthJ-a  
Thermal Resistance, Junction to mouting base  
Thermal Resistance, Junction to ambient in free air  
3.12  
100  
K/W  
K/W  
23/10/2012  
COMSET SEMICONDUCTORS  
1 |3  
NPN BD675/A - BD677/A - BD679/A - BD681/A  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
Ratings  
Test Condition(s)  
Min  
Typ Max Unit  
IE=0 , VCB= 60 V  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0,2  
0,2  
0,2  
0,2  
2
2
2
2
0,5  
0,5  
0,5  
0,5  
IE=0 , VCB= 80 V  
IE=0 , VCB= 100 V  
IE=0 , VCB= 120 V  
IE=0 ,VCB = 30V, Tj= 150°C BD675/A  
IE=0 ,VCB = 40V, Tj= 150°C BD677/A  
IE=0 ,VCB = 50V, Tj= 150°C BD679/A  
IE=0 ,VCB = 60V, Tj= 150°C BD681/A  
IB=0 , VCE= ½VCEOMAX  
IB=0 , VCE= ½VCEOMAX  
IB=0 , VCE= ½VCEOMAX  
IB=0 , VCE= ½VCEOMAX  
Collector cut-off  
current  
ICBO  
mA  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
Collector cut-off  
current  
ICEO  
mA  
mA  
V
Emitter cut-  
offcurrent  
IEBO  
IC=0, -VEB=5 V  
-
-
5
BD675/A  
BD677/A  
BD679/A  
BD681/A  
45  
60  
80  
-
-
-
-
-
-
-
-
Collector-Emitter  
sustaning Voltage  
VCEO(SUS)  
IB=0 , IC=50 mA  
100  
BD675, BD677, BD679, BD681  
IC=1.5 A,IB=30 mA  
BD675A, BD677A, BD679A, BD681A  
IC=2 A,IB=40 mA  
BD675, BD677, BD679, BD681  
VCE=3 V, IC=500 mA  
-
-
2,5  
2.8  
-
Collector-Emitter  
saturation Voltage  
VCE(SAT)  
V
-
-
-
2200  
BD675, BD677, BD679, BD681  
VCE=3 V, IC=1,5 A  
BD675, BD677, BD679, BD681  
VCE=3 V, IC=4 A  
750  
-
-
hFE  
DC Current Gain  
-
1500  
-
BD675A, BD677A, BD679A, BD681A  
VCE=3 V, IC=2 A  
BD675, BD677, BD679, BD681  
VCE=3 V, IC=1,5 A  
BD675A, BD677A, BD679A, BD681A  
VCE=3 V, IC=2 A  
750  
-
-
-
-
-
-
2,5  
2.5  
Base-Emitter  
Voltage(1&2)  
VBE  
V
Small signal  
current gain  
Ut-off frequency  
Diode forward  
voltage  
hfe  
fhfe  
VF  
VCE=3 V, IC=1,5 A, f= 1 MHz  
VCE=3 V, IC=1,5 A  
IF=1,5 A  
10  
-
-
-
-
-
60  
1,5  
kHz  
V
-
Second-  
breakdown  
collector current  
-VCE=50 V, tP= 20ms,non rep., without  
heatsink  
I(SB)  
0,8  
-
-
A
23/10/2012  
COMSET SEMICONDUCTORS  
2 |3  
NPN BD675/A - BD677/A - BD679/A - BD681/A  
Symbol  
Ratings  
Test Condition(s)  
Min  
Typ Max Unit  
ton  
toff  
Turn-on time  
Turn-off time  
-
-
0,3  
1,5  
1.5  
5
-Icon= 1,5A, -Ibon= Iboff= 6mA,  
µs  
1. Measured under pulse conditions :tP <300µs, <2%.  
2. BE decreases by about 3,6 mV/K with increasing temperature.  
V
MECHANICAL DATA CASE TO-126  
DIMENSIONS  
min  
7.4  
10.5  
2.4  
0.7  
2.25 typ.  
0.49  
max  
7.8  
10.8  
2.7  
A
B
C
D
E
F
0.9  
0.75  
G
L
M
N
P
S
4.4 typ.  
15.7 typ.  
1.27 typ.  
3.75 typ.  
3.0  
3.2  
2.54 typ.  
Pin 1 :  
Pin 2 :  
Pin 3 :  
Emitter  
Collector  
Base  
Revised August 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to  
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically  
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not  
authorized for use as critical components in life support devices or systems.  
www.comsetsemi.com  
23/10/2012  
info@comsetsemi.com  
COMSET SEMICONDUCTORS  
3 |3  

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