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BD898 [COMSET]

SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
BD898
型号： BD898
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

SILICON DARLINGTON POWER TRANSISTORS
硅达林顿功率晶体管

晶体 晶体管
文件： 总4页 (文件大小：107K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BD896 – BD898 – BD900 – BD902  
SILICON DARLINGTON POWER TRANSISTORS  
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
enveloppe. They are intended for use in output stages in audio equipment, general amplifiers,  
and analogue switching application.  
NPN complements are BD895 - BD897 - BD899 - BD901  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
-45  
-60  
-80  
-100  
-45  
-60  
VCBO  
Collector-Base Voltage  
V
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
-80  
-100  
VEBO  
-5  
-8  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
IC  
Collector Current  
A
IB  
Base Current  
-300  
mA  
BD902  
Tc = 25°  
Ta = 25°  
70  
2
PT  
Power Dissipation  
Watts  
°C  
TJ  
Ts  
150  
Junction Temperature  
-65 to +150  
Storage Temperature range  
25/09/2012  
COMSET SEMICONDUCTORS  
1 | 4  
BD896 – BD898 – BD900 – BD902  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
IE= 0  
BD896  
VCB = -45 V  
IE= 0  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
VCB = -60 V  
TC=25°C  
-
-
-
-
-0.2  
mA  
mA  
IE= 0  
VCB = -80 V  
IE= 0  
VCB = -100 V  
Collector Cutoff  
Current  
ICBO  
IE= 0  
VCB = -45 V  
IE= 0  
VCB = -60 V  
TC=100°  
C
-2  
IE= 0  
VCB = -80 V  
IE= 0  
VCB = -100 V  
IE= 0, VCE = - 30 V  
IE= 0, VCE = - 30 V  
IE= 0, VCE = - 40 V  
IE= 0, VCE = - 50 V  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
Collector Cutoff  
Current  
ICEO  
-
-
-
-
-0.5  
-2  
mA  
mA  
V
Emitter Cutoff  
Current  
VEB= -5 V, IC= 0  
IEBO  
-45  
-60  
-80  
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage  
(*)  
VCEO  
IC= -100 mA, IB= 0  
IC= -3 A, IB= -12 mA  
-100  
Collector-Emitter  
saturation Voltage (*)  
VCE(SAT)  
-
-
-2.5  
V
25/09/2012  
COMSET SEMICONDUCTORS  
2 | 4  
BD896 – BD898 – BD900 – BD902  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
VBE(on)  
Ratings  
Min Typ Max Unit  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
BD896  
BD898  
BD900  
BD902  
Base-Emitter Voltage  
(*)  
IC= -3 A, VCE= -3 V  
-
750  
-
-
-
-
-2.5  
-
V
-
VCE= -3.0 V  
IC= -3 A  
hFE  
DC Current Gain (*)  
C-E Diode Forward  
Voltage  
VECF  
IE= -8 A  
-3.5  
V
SWITCHING TIMES  
Symbol Ratings  
Test Condition(s)  
Min Typ Max Unit  
ton  
toff  
turn-on time  
turn-off time  
-
-
1
5
-
-
IC= -3 A, VBE(off) = 3.5 V  
Bon = -IBoff = -12 mA, RL = 10 Ω  
µs  
I
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
1.79  
62.5  
°C/W  
°C/W  
RthJ-C  
RthJ-A  
Thermal Resistance Junction To Case  
Thermal Resistance Junction To Free Air  
25/09/2012  
COMSET SEMICONDUCTORS  
3 | 4  
BD896 – BD898 – BD900 – BD902  
MECHANICAL DATA CASE TO-220  
DIMENSIONS (mm)  
Min.  
Max.  
A
B
C
D
E
F
9,90  
10,30  
15,65  
13,20  
6,45  
4,30  
2,70  
2,60  
15,75  
1,15  
3,50  
-
15,90  
13,40  
6,65  
4,50  
3,15  
3,00  
17.15  
1,40  
3,70  
1,37  
0,55  
2,70  
5,08  
2.54  
0,90  
G
H
L
M
N
P
R
S
T
0,46  
2,50  
4,98  
2.49  
0,70  
U
Pin 1 :  
Pin 2 :  
Pin 3 :  
Package  
Base  
Collector  
Emitter  
Collector  
Revised August 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change  
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any  
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as  
critical components in life support devices or systems.  
www.comsetsemi.com  
25/09/2012  
info@comsetsemi.com  
COMSET SEMICONDUCTORS  
4 | 4  

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