BFX89 [COMSET]
WIDE BAND VHF/UHF AMPLIFIER; WIDE BAND VHF / UHF放大器
| 型号： | BFX89 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | WIDE BAND VHF/UHF AMPLIFIER |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFX89
BFY90
WIDE BAND VHF/UHF AMPLIFIER
• SILICON PLANAR EPITAXIAL TRANSISTORS
• TO-72 METAL CASE
• VERY LOW NOISE
APPLICATIONS :
• TELECOMMUNICATIONS
• WIDE BAND UHF AMPLIFIER
• RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
interdigitated base emitter geometry. They are particulary designed for use in wide
band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low
reverse capacitance, excellent cross modulation properties and very low noise
performance. The BFY90 is complementary to the BFR99A. Typical applications
include telecommunication and radio communication equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
Collector-Emitter Voltage ( IB = 0)
VCEO
15
30
V
V
VCER
VCBO
VEBO
IC
Collector-Emitter Voltage ( RBE ≤50Ω )
Collector-Base Voltage ( IE= 0)
Collector-Base Voltage ( IC = 0)
Collector Current
30
V
2.5
V
25
mA
mA
mW
°C
Collector Peak Current
50
ICM
200
Ptot
Tstg, Tj
Total Power Dissipation at Tamb ≤ 25 °C
Storage and Junction Temperature
-65 to 200
COMSET SEMICONDUCTORS
1/4
BFX89
BFY90
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-C
RthJ-
Thermal Resistance, Junction – Case
Thermal Resistance, Junction – ambient
Max
Max
580
880
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
Collector Cutoff Current
(IE=0)
Collector-emitter Knee
Voltage
ICBO
VCEK
V
CB = 15V
-
-
10
nA
V
*
IC = 20mA
-
-
-
0.75
VCE = 5V
f = 500MHZ
IC =2 mA
BFX89
BFY90
BFX89
BFY90
BFX89
1
-
1
1.1
1.2
1.4
-
-
fT
Transition Frequency
GHz
VCE = 5V
-
-
-
f = 500MHZ
IC =25 mA
1.3
20
IC= 2mA
VCE= 1 V
150
BFY90
BFX89
BFY90
BFX89
25
20
25
-
-
-
-
-
150
125
125
1.7
hFE
DC Current Gain
-
IC= 25mA
VCE= 1 V
IE =0
VCB = 10V
CCBO(1)
Cre(2)
Collector-base Capacitance
Reverse Capacitance
pF
pF
f= 1MHZ
VCE= 5
BFY90
-
-
1.5
BFX89
BFY90
-
-
0.6
0.6
-
IC= 2mAV
f = 1MHZ
0.8
COMSET SEMICONDUCTORS
2/4
BFX89
BFY90
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
IC= 2mA , VCE= 5 V
f = 100KHz
BFY90 Only
-
-
4
Rg = Optimized
IC= 2mA , VCE= 5 V BFX89
f= 200 MHz
-
-
-
-
3.3
2.5
-
4
3.5
6.5
5
Rg = Optimized
BFY90
BFX89
BFY90
NF(2)
Noise Figure
dB
IC= 2mA , VCE= 5 V
f = 500 MHz
Rg = 50 Ω
-
IC= 2mA , VCE= 5 V
f = 800 MHz
BFX89
-
7
-
Rg = Optimized
BFY90
-
5.5
22
7
-
-
-
-
For BFX89
IC= 8mA
VCE= 10 V
f=200 MHz
f=800 MHz
f=200 MHz
19
-
Power Gain ( not
neutralized)
Gpe (2)
dB
For BFY90
IC= 14mA
VCE= 10 V
21
23
f=800 MHz
-
-
8
6
-
-
For BFX89
IC=8mA
(3) Channel 9
VCE= 10 V
Dim = -30 dB
(4) Channel 62
(3) Channel 9
(4) Channel 62
-
10
-
6
Po
Output Power
mW
For BFY90
IC=14mA
VCE= 10 V
Dim = -30 dB
12
12
-
-
* IB = value for which IC =22 mA at VCE = 1V
(1) Shield lead not grounded
(2) Shield lead grounded
(3) fp = 202MHZ, fq = 205 MHZ, f(2q-p) = 208MHZ
(4) fp = 798MHZ, fq = 802 MHZ, f(2q-p) = 806MHZ
COMSET SEMICONDUCTORS
3/4
BFX89
BFY90
MECHANICAL DATA CASE TO-72
Pin 1 :
Pin 2 :
Pin 3 :
Pin 4 :
Emitter
Base
Collector
Case
COMSET SEMICONDUCTORS
4/4
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