BUV23 [COMSET]
POWER SWITCH APPLICATIONS; 电源开关的应用型号: | BUV23 |
厂家: | COMSET SEMICONDUCTOR |
描述: | POWER SWITCH APPLICATIONS |
文件: | 总2页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN BUV23
POWER SWITCH APPLICATIONS
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.
They are intended for use in power switching appications in military and industrial equipments.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
IB = 0
IE = 0
IC = 0
VCEO
325
V
VCBO
VEBO
VCEX
VCER
IC
400
V
7.0
V
V
BE = -1.5V
BE <= 100 Ω
400
V
R
390
V
30
A
Collector Peak Current
Base Current
tp = 10ms
ICM
40
A
IB
6
A
Total Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
Pt
250
Watts
°C
°C
TJ
200
TStg
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
0.7
Unit
°C/W
Thermal Resistance, Junction to Case
RthJC
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
Collector-Emitter
IC=200 mA, L= 25mH
325
-
-
V
Sustaining Voltage (1)
Emitter-BaseBreakdown
IC=0A , IE=50 mA
7
-
-
V
VEB0(SUS)
ICEO
ICEX
Voltage (1)
VCE=260 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
Collector Cutoff Current
Collector Cutoff Current
-
-
-
-
-
-
3
3
mA
mA
12
COMSET SEMICONDUCTORS
1/2
NPN BUV23
VEB=5.0 V, IC=0
Emitter Cutoff Current
-
15
8
-
-
-
1
60
-
mA
-
IEBO
hFE
IC=8 A , VCE=4.0 V
IC=16 A , VCE=4.0 V
IC=8 A , IB=1.6 A
DC Current Gain (1)
-
0.2 0.8
0.35
Collector-Emitter
VCE(SAT)
VBE(SAT)
saturation Voltage (1)
IC=16 A , IB=3.2 A
-
1
V
Base-Emitter saturation
Voltage (1)
IC=16 A , IB=3.2 A
-
1.15 1.5
Test Condition(s)
VCE=15 V , IC=2 A , f=10 MHz
Symbol
fT
Ratings
Min Typ Mx Unit
Transition frequency
8
-
-
MHz
IC=16 A , IB=3.2 A
Turn-on time
Storage time
File time
-
0.55 1.3
1.7 2.5
0.26 1.2
ton
-
-
ts
IC=16 A
µs
IB1 = -IB2 =3.2 A
tf
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the conseqDueantcaesaoref ussuebojfescutchtoincfohrmanatgioen wnoitrhfooruetrrnoorstitcheat.could appear.
COMSET SEMICONDUCTORS
2/2
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