BUV23 [COMSET]

POWER SWITCH APPLICATIONS; 电源开关的应用
BUV23
型号: BUV23
厂家: COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述:

POWER SWITCH APPLICATIONS
电源开关的应用

晶体 开关 晶体管 电源开关
文件: 总2页 (文件大小:197K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NPN BUV23  
POWER SWITCH APPLICATIONS  
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.  
They are intended for use in power switching appications in military and industrial equipments.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector Current  
IB = 0  
IE = 0  
IC = 0  
VCEO  
325  
V
VCBO  
VEBO  
VCEX  
VCER  
IC  
400  
V
7.0  
V
V
BE = -1.5V  
BE <= 100  
400  
V
R
390  
V
30  
A
Collector Peak Current  
Base Current  
tp = 10ms  
ICM  
40  
A
IB  
6
A
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
Pt  
250  
Watts  
°C  
°C  
TJ  
200  
TStg  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
0.7  
Unit  
°C/W  
Thermal Resistance, Junction to Case  
RthJC  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
VCEO(SUS)  
Ratings  
Min Typ Mx Unit  
Collector-Emitter  
IC=200 mA, L= 25mH  
325  
-
-
V
Sustaining Voltage (1)  
Emitter-BaseBreakdown  
IC=0A , IE=50 mA  
7
-
-
V
VEB0(SUS)  
ICEO  
ICEX  
Voltage (1)  
VCE=260 V , IB=0A  
VCE= VCEX , VBE= -1.5V  
VCE= VCEX , VBE= -1.5V, Tcase = 125°C  
Collector Cutoff Current  
Collector Cutoff Current  
-
-
-
-
-
-
3
3
mA  
mA  
12  
COMSET SEMICONDUCTORS  
1/2  
NPN BUV23  
VEB=5.0 V, IC=0  
Emitter Cutoff Current  
-
15  
8
-
-
-
1
60  
-
mA  
-
IEBO  
hFE  
IC=8 A , VCE=4.0 V  
IC=16 A , VCE=4.0 V  
IC=8 A , IB=1.6 A  
DC Current Gain (1)  
-
0.2 0.8  
0.35  
Collector-Emitter  
VCE(SAT)  
VBE(SAT)  
saturation Voltage (1)  
IC=16 A , IB=3.2 A  
-
1
V
Base-Emitter saturation  
Voltage (1)  
IC=16 A , IB=3.2 A  
-
1.15 1.5  
Test Condition(s)  
VCE=15 V , IC=2 A , f=10 MHz  
Symbol  
fT  
Ratings  
Min Typ Mx Unit  
Transition frequency  
8
-
-
MHz  
IC=16 A , IB=3.2 A  
Turn-on time  
Storage time  
File time  
-
0.55 1.3  
1.7 2.5  
0.26 1.2  
ton  
-
-
ts  
IC=16 A  
µs  
IB1 = -IB2 =3.2 A  
tf  
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm  
inches  
1,004  
1,53  
1,18  
0,68  
0,43  
0,46  
0,34  
0,6  
A
B
C
D
E
G
H
L
25,51  
38,93  
30,12  
17,25  
10,89  
11,62  
8,54  
1,55  
19,47  
1
M
N
P
0,77  
0,04  
0,16  
4,06  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability  
for the conseqDueantcaesaoref ussuebojfescutchtoincfohrmanatgioen wnoitrhfooruetrrnoorstitcheat.could appear.  
COMSET SEMICONDUCTORS  
2/2  

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