概述
规格参数
数据手册BUX41N 概述
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR 大电流，高转速，高功率晶体管 其他晶体管
BUX41N 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.58 |
| Is Samacsys： | N | Base Number Matches： | 1 |
BUX41N 数据手册
通过下载BUX41N数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载NPN BUX41N
HIGH CURRENT, HIGH SPEED,
HIGH POWER TRANSISTOR
The BUX41N is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in switching and linear applications in military and industrial
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
VCBO
VCEX
VEBO
IC
Collector-Emitter Voltage
IB = 0
IE = 0
160
220
220
7
18
V
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
BE = -1.5 V
IC = 0
ICM
IB
Collector Peak Current
Base Current
tp = 10ms
25
3.6
A
A
Pt
TJ
TStg
Total Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
120
200
-65 to +200
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.46
°C/W
COMSET SEMICONDUCTORS
1/3
NPN BUX41N
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
Ratings
Test Condition(s)
Min
Typ Max Unit
Collector-Emitter Sustaining
Voltage (*)
IC= 200 mA
160
-
-
V
VEBO
ICEO
Emitter-Base Voltage
Collector Cutoff Current
IC= 0 A, IE= 50 mA
7
-
-
-
-
-
-
1
1
V
mA
VCE= 130 V, IB= 0 A
VCE= 220 V, VBE= -1.5 V
VCE= 220 V, VBE= -1.5 V
ICEX
Collector Cutoff Current
mA
-
-
5
T
case = 125°C
IEBO
hFE
Emitter Cutoff Current
DC Current Gain (*)
VEB= 5.0 V, IC= 0 A
IC= 8 A, VCE= 4.0 V
IC= 12 A, VCE= 4.0 V
IC= 8 A, IB= 0.8 A
IC= 12 A, IB= 1.5 A
-
15
8
-
-
-
-
1
45
-
1.2
1.6
mA
-
0.5
0.75
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
(*)
Second breakdown collector
current
VCE(SAT)
-
V
VBE(SAT)
IS/B
ES/B
fT
IC= 12 A , IB= 1.5 A
-
1.5
2
VCE= 30 V, ts = 1s
VCE= 100 V, ts = 1s
Vclamp= 160 V
L= 500 µH
VCE= 15 V, IC= 1 A
f= 10 MHz
4
0.27
-
-
-
-
A
A
Clamped ES/B Collector current
Transition frequency
Turn-on time
12
8
-
-
-
-
-
MHz
IC= 12 A, IB= 1.5 A
VCC= 30 V
ton
0.35
0.85
0.14
1.3
1.5
0.8
ts
Storage time
-
µs
IC= 12 A, VCC= 30 V
IB1 = -IB2 = 1.5 A
tf
File time
-
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
01/10/2012
COMSET SEMICONDUCTORS
2/3
NPN BUX41N
MECHANICAL DATA CASE TO-3
DIMENSIONS
(mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
01/10/2012
info@comsetsemi.com
3/3
COMSET SEMICONDUCTORS
BUX41N 相关器件
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| BUX43LEADFREE | CENTRAL | Power Bipolar Transistor, 10A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 获取价格 |
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| BUX44 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | 获取价格 |
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| BUX44 | CENTRAL | Power Transistors | 获取价格 |
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| BUX45 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 | 获取价格 |
|
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