BUY69A [COMSET]
MULTIEPITAXIAL MESA NPN; MULTIEPITAXIAL MESA NPN
| 型号： | BUY69A |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | MULTIEPITAXIAL MESA NPN |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN BUY69A
MULTIEPITAXIAL MESA NPN
The BUY69A is silicon multiepitaxial mesa NPN transistor in Jedec TO-3.
They are intended for horizontal deflection output stage of CTV receivers and high voltage, fast
switching and industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
VEBO
VCES
IC
Collector-Emitter Voltage
IB = 0
IC = 0
IC = 0
400
8
1000
10
V
V
V
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
A
ICM
IB
Collector Peak Current
Base Current
tp = 10ms
15
3
A
A
Pt
TJ
TStg
Total Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°C
100
200
-65 to +200
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.75
°C/W
COMSET SEMICONDUCTORS
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NPN BUY69A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
Collector-Emitter Sustaining
Voltage (*)
VCEO(SUS)
VCBO
IEBO
ICES
hFE
IC=100 mA
400
-
-
-
V
V
IC=1 mA
IE =0
VCE=8 V
IC =0
VCE= VCES
VBE = 0
IC=2.5 A
VCE=10 V
IC=8 A
IB=2.5 A
IC=8 A
IB=2.5 A
IC=0.5 A
VCE=10 V
Collector-Emitter
1000
-
-
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain (*)
-
-
1
1
-
mA
mA
-
-
15
-
-
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation
Voltage (*)
VCE(SAT)
VBE(SAT)
fT
-
3.3
2.2
-
V
-
-
Transition Frequency
-
10
-
MHz
A
Second Breakdown Collector
Current (**)
Is/b
VCE=25 V
4
-
-
IC=5 A , IB=1 A
VCC=250 V
ton
Turn-on time
Storage time
File time
0.2
1.7
0.3
-
IC=5 A , VCC=250 V
IB1 =1A , -IB2 =1 A
IC=5 A , VCC=-250 V
IB1 =1A , -IB2 =1 A
IC=8 A , VCC=-40 V
IB1 =2.5A , -IB2 =2.5 A
ts
-
-
µs
tf
-
-
tf
File time
1
(*) Pulse Duration = 300 µs, Duty Cycle <= 1.5%
(**) Pulsed :1s, non repetitive pulse
COMSET SEMICONDUCTORS
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NPN BUY69A
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
info@comsetsemi.com
2/2
COMSET SEMICONDUCTORS
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