MJ3001 [COMSET]
COMPLEMENTARY POWER DARLINGTONS; 互补发电DARLINGTONS
| 型号： | MJ3001 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | COMPLEMENTARY POWER DARLINGTONS |
| 文件： | 总3页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP MJ3000 – MJ3001
COMPLEMENTARY POWER DARLINGTONS
The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic
Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for
use in power linear and switching applications.
The complementary PNP types are the MJ2500 and MJ2501 respectively
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
60
80
60
80
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
IE=0
V
V
IB=0
IC=0
5.0
10
V
A
IB
Base Current
0.2
A
PT
Power Dissipation
@ TC < 25°
150
200
W
°C
TJ
Ts
Junction Temperature
Storage Temperature
MJ3001 -65 to +200
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.17
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1 | 3
PNP MJ3000 – MJ3001
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
BVCEO
Ratings
Test Condition(s)
Min Typ Max Unit
MJ3000
MJ3001
60
80
-
-
-
-
Collector-Emitter Breakdown IC=100mA
V
Voltage (*)
IB=0
VCE=30 V
IB=0
VCE=40 V
IB=0
VBE=5.0 V
IC=0
VCB=60 V
RBE=1.0 kΩ
VCB=80 V
RBE=1.0 kΩ
VCB=60 V
RBE=1.0 kΩ
TC=150°C
VCB=80 V
RBE=1.0 kΩ
TC=150°C
IC=5.0 A
IB=20 mA
IC=10 A
MJ3000
MJ3001
-
-
-
-
-
-
-
-
-
-
ICEO
Collector Cutoff Current
1.0
2.0
1.0
mA
mA
MJ3000
MJ3001
IEBO
Emitter Cutoff Current
MJ3000
MJ3001
Collector-Emitter
Leakage Current
ICER
mA
MJ3000
MJ3001
-
-
-
-
5.0
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
MJ3000
MJ3001
-
-
-
-
-
2.0
4.0
3
Collector-Emitter saturation
Voltage (*)
VCE(SAT)
V
-
-
IB=50 mA
IC=5.0 A
VCE=3.0V
VCE=3.0 V
IC=5.0 A
VBE
hFE
Base-Emitter Voltage (*)
DC Current Gain (*)
V
-
1000
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
29/10/2012
COMSET SEMICONDUCTORS
2 | 3
PNP MJ3000 – MJ3001
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
29/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
相关型号：
MJ3001LEADFREE
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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