TIC106A [COMSET]
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS; PNPN硅反向阻断晶闸管
| 型号： | TIC106A |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS |
| 文件： | 总3页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
•
•
•
•
•
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 200 µA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Ratings
Unit
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage
(see Note1)
VDRM
VRRM
IT(RMS)
100 200 300 400 500 600 700 800
V
V
A
Repetitive peak reverse voltage
Continuous on-state current at (or below)
80°C case temperature (see note2)
Average on-state current (180° conduction
angle) at(or below) 80°C case temperature
(see Note3)
100 200 300 400 500 600 700 800
5
3.2
IT(AV)
A
Surge on-state current (see Note4)
Peak positive gate current (pulse width
≤300 µs)
30
ITM
IGM
A
A
0.2
Peak power dissipation (pulse width ≤300
µs)
Average gate power dissipation (see
Note5)
1.3
0.3
PGM
W
W
PG(AV)
Operating case temperature range
-40 to +110
-40 to +125
TC
Tstg
°C
°C
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
230
TL
°C
Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 80°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
Page 1 of 3
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
VAA = 30 V, RL = 6 Ω, RGK(eff) = 5 kΩ,
tgt
tq
1.75
Vin = 50 V
µs
7.7
VAA = 30 V, RL = 6 Ω, IRM ≈ 8 A
R∂JC
R∂JA
≤ 3.5
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
VD = Rated VDRM, RGK = 1 kΩ,
IDRM
IRRM
IGT
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
-
-
-
-
-
400
1
µA
mA
µA
TC = 110°C
VR = Rated VRRM, IG = 0,
TC = 110°C
VAA = 6 V, RL = 100 Ω,
60 200
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = -40°C
-
-
1.2
1
VAA = 6 V, RL = 100 Ω,
VGT
Gate trigger voltage
V
0.4 0.6
R
GK = 1 kΩ, tp(g) ≥ 20µs,
VAA = 6 V, RL = 100 Ω,
0.2
-
-
-
-
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = 110°C
VAA = 6 V, RGK = 1 kΩ,
initiating IT = 10 mA
-
-
5
8
Holding current
IH
mA
VAA = 6 V, RGK = 1 kΩ,
initiating IT = 10 mA,
TC = -40°C
VTM
Peak on-state voltage
I
TM = 5A (see Note6)
-
-
-
1.7
-
V
Critical rate of rise of off-state
voltage
VD = Rated VD, RGK = 1 kΩ,
TC = 110°C
dv/dt
10
V/µs
Note 6:
This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
Page 2 of 3
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
kathode
Anode
Gate
Page 3 of 3
相关型号：
TIC106D
Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3
BOURNS
©2020 ICPDF网 联系我们和版权申明