概述
规格参数
数据手册TIC116D 概述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS PNPN硅反向阻断晶闸管 可控硅整流器
TIC116D 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.66 |
| Is Samacsys： | N | Base Number Matches： | 1 |
TIC116D 数据手册
通过下载TIC116D数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
•
•
•
•
•
•
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Ratings
Unit
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage
(see Note1)
VDRM
VRRM
IT(RMS)
100 200 300 400 500 600 700 800
V
V
A
Repetitive peak reverse voltage
Continuous on-state current at (or below)
70°C case temperature (see note2)
Average on-state current (180° conduction
angle) at(or below) 70°C case temperature
(see Note3)
100 200 300 400 500 600 700 800
8
5
IT(AV)
A
Surge on-state current (see Note4)
Peak positive gate current (pulse width
≤300 µs)
80
3
ITM
IGM
A
A
Peak power dissipation (pulse width ≤300
µs)
Average gate power dissipation (see
Note5)
5
1
PGM
W
W
PG(AV)
Operating case temperature range
-40 to +110
-40 to +125
TC
Tstg
°C
°C
Storage temperature range
Lead temperature 1.6 mm from case for 10
seconds
230
TL
°C
Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
Page 1 of 3
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
Gate-controlled
Turn-on time
Circuit-communicated
Turn-off time
V
AA = 30 V, RL = 6 Ω,
tgt
tq
0.8
RGK(eff) = 100 Ω, Vin = 20 V
µs
11
VAA = 30 V, RL = 6 Ω, IRM ≈ 10 A
R∂JC
R∂JA
≤ 3
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
VD = Rated VDRM, RGK = 1 kΩ,
IDRM
IRRM
IGT
Repetitive peak off-state current
Repetitive peak reverse current
Gate trigger current
-
-
-
-
-
2
2
mA
mA
mA
TC = 110°C
VR = Rated VRRM, IG = 0,
TC = 110°C
VAA = 6 V, RL = 100 Ω,
5
20
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = -40°C
VAA = 6 V, RL = 100 Ω,
RGK = 1 kΩ, tp(g) ≥ 20µs,
-
-
-
2.5
VGT
Gate trigger voltage
V
0.8 1.5
VAA = 6 V, RL = 100 Ω,
0.2
-
-
-
-
RGK = 1 kΩ, tp(g) ≥ 20µs,
TC = 110°C
VAA = 6 V, RGK = 1 kΩ, initiating
IT = 100 mA
-
-
40
70
Holding current
IH
mA
VAA = 6 V, RGK = 1 kΩ, initiating
IT = 100 mA,
TC = -40°C
VTM
Peak on-state voltage
I
TM = 8A (see Note6)
-
-
-
1.7
-
V
Critical rate of rise of off-state
voltage
VD = Rated VD,
TC = 110°C
dv/dt
100
V/µs
Note 6:
This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body.
Page 2 of 3
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
kathode
Anode
Gate
Page 3 of 3
TIC116D 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TIC116D-S | BOURNS | Silicon Controlled Rectifier, 5000mA I(T), 400V V(DRM) | 获取价格 |
|
| TIC116E | COMSET | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS | 获取价格 |
|
| TIC116E | TI | 暂无描述 | 获取价格 |
|
| TIC116E | NJSEMI | Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220 | 获取价格 |
|
| TIC116F | TI | 8A, 50V, SCR | 获取价格 |
|
| TIC116F | NJSEMI | Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220 | 获取价格 |
|
| TIC116M | POINN | SILICON CONTROLLED RECTIFIERS | 获取价格 |
|
| TIC116M | COMSET | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS | 获取价格 |
|
| TIC116M | TI | 8A, 600V, SCR | 获取价格 |
|
| TIC116M | NJSEMI | Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220 | 获取价格 |
|
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