TIP106 [COMSET]

SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
TIP106
型号: TIP106
厂家: COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述:

SILICON DARLINGTON POWER TRANSISTORS
硅达林顿功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PNP TIP105-106-107  
SILICON DARLINGTON POWER TRANSISTORS  
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
enveloppe. They are designed for general purpose amplifier and low-speed switching  
applications.  
NPN complements are TIP100-101-102  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Value  
Unit  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
-60  
-80  
-100  
-60  
-80  
-100  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
VCEO  
VEBO  
IC  
V
V
A
A
A
-5  
-8  
ICM  
Collector Peak Current  
Base Current  
-15  
-1  
IB  
@ Tc < 25°  
@ Ta < 25°  
80  
2
PT  
Power Dissipation  
Watts  
TJ  
Ts  
Junction Temperature  
150  
°C  
Storage Temperature range  
-65 to +150  
04/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  
PNP TIP105-106-107  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-case  
RthJ-amb  
From junction-case  
From junction-ambient  
1.56  
62.5  
°C/W  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
ICBO  
Ratings  
Test Condition(s)  
Min Typ Max Unit  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
Collector Cutoff Current IE= 0,VCB = -VCBOmax  
-
-
-
-
-
-
-50  
-50  
-8  
µA  
µA  
mA  
V
IE= 0,  
V
ICEO  
Collector Cutoff Current  
CE = -1/2 VCEOmax  
IEBO  
Emitter Cutoff Current  
VEB= -5 V, IC= 0  
-60  
-80  
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage (*)  
VCEO  
IC= -30 mA, IB= 0  
IC= -3 A, IB= -6 mA  
IC= -8 A, IB= -80 mA  
IC= -8 A, VCE= -4 V  
VCE= -4 V, IC= -3 A  
VCE= -4 V, IC= -8 A  
TIP107 -100  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
TIP105  
TIP106  
TIP107  
-
-
-
-
-
-
-
-2  
-2.5  
-2.8  
20k  
-
Collector-Emitter  
saturation Voltage (*)  
VCE(SAT)  
VBE(on)  
hFE  
V
V
-
-
Base-Emitter Voltage  
(*)  
1000  
200  
-
DC Current Gain (*)  
-
IE= 0, VCB = -10 V,  
f = 1MHz  
COB  
Output Capacitance  
300  
pF  
(*) Pulse Width 300 µs, Duty Cycle 2.0%  
04/10/2012  
COMSET SEMICONDUCTORS  
2 | 3  
PNP TIP105-106-107  
MECHANICAL DATA CASE TO-220  
DIMENSIONS (mm)  
Min.  
Max.  
A
B
C
D
E
F
9,90  
10,30  
15,65  
13,20  
6,45  
4,30  
2,70  
2,60  
15,75  
1,15  
3,50  
-
15,90  
13,40  
6,65  
4,50  
3,15  
3,00  
17.15  
1,40  
3,70  
1,37  
0,55  
2,70  
5,08  
2.54  
0,90  
G
H
L
M
N
P
R
S
T
0,46  
2,50  
4,98  
2.49  
0,70  
U
Pin 1 :  
Pin 2 :  
Pin 3 :  
Case :  
Base  
Collector  
Emitter  
Collector  
September 2012  
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change  
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any  
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as  
critical components in life support devices or systems.  
www.comsetsemi.com  
info@comsetsemi.com  
04/10/2012  
COMSET SEMICONDUCTORS  
3 | 3  

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