TIP106 [COMSET]
SILICON DARLINGTON POWER TRANSISTORS; 硅达林顿功率晶体管
| 型号： | TIP106 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON DARLINGTON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP TIP105-106-107
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
NPN complements are TIP100-101-102
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Value
Unit
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
-60
-80
-100
-60
-80
-100
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
VCEO
VEBO
IC
V
V
A
A
A
-5
-8
ICM
Collector Peak Current
Base Current
-15
-1
IB
@ Tc < 25°
@ Ta < 25°
80
2
PT
Power Dissipation
Watts
TJ
Ts
Junction Temperature
150
°C
Storage Temperature range
-65 to +150
04/10/2012
COMSET SEMICONDUCTORS
1 | 3
PNP TIP105-106-107
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-case
RthJ-amb
From junction-case
From junction-ambient
1.56
62.5
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Test Condition(s)
Min Typ Max Unit
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
Collector Cutoff Current IE= 0,VCB = -VCBOmax
-
-
-
-
-
-
-50
-50
-8
µA
µA
mA
V
IE= 0,
V
ICEO
Collector Cutoff Current
CE = -1/2 VCEOmax
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
-60
-80
-
-
-
-
-
-
Collector-Emitter
Breakdown Voltage (*)
VCEO
IC= -30 mA, IB= 0
IC= -3 A, IB= -6 mA
IC= -8 A, IB= -80 mA
IC= -8 A, VCE= -4 V
VCE= -4 V, IC= -3 A
VCE= -4 V, IC= -8 A
TIP107 -100
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
TIP105
TIP106
TIP107
-
-
-
-
-
-
-
-2
-2.5
-2.8
20k
-
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
VBE(on)
hFE
V
V
-
-
Base-Emitter Voltage
(*)
1000
200
-
DC Current Gain (*)
-
IE= 0, VCB = -10 V,
f = 1MHz
COB
Output Capacitance
300
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012
COMSET SEMICONDUCTORS
2 | 3
PNP TIP105-106-107
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
B
C
D
E
F
9,90
10,30
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
G
H
L
M
N
P
R
S
T
0,46
2,50
4,98
2.49
0,70
U
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
info@comsetsemi.com
04/10/2012
COMSET SEMICONDUCTORS
3 | 3
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